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dc.contributor.authorMachado, J. M.-
dc.contributor.authorShiyou, Y.-
dc.contributor.authorPassaro, A.-
dc.contributor.authorAbe, N. M.-
dc.contributor.authorYan, W.-
dc.contributor.authorWang, Z. M.-
dc.date.accessioned2014-05-20T15:23:06Z-
dc.date.accessioned2016-10-25T17:56:56Z-
dc.date.available2014-05-20T15:23:06Z-
dc.date.available2016-10-25T17:56:56Z-
dc.date.issued2000-01-01-
dc.identifier.citationProceedings of the Fourth International Conference on Electromagnetic Field Problems and Applications. Beijing: World Publishing Corporation, p. 207-210, 2000.-
dc.identifier.urihttp://hdl.handle.net/11449/33945-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/33945-
dc.description.abstractIn order to obtain the quantum-mechanical properties of layered semicondutor structures (quantum well and superlattice structures, for instance), solutions of the Schrodinger equation should be obtained for arbitrary potential profiles. In this paper, it is shown that such problems may be also studied by the Element Free Galerkin Method.en
dc.format.extent207-210-
dc.language.isoeng-
dc.publisherWorld Publishing Corporation-
dc.sourceWeb of Science-
dc.subjectconvergence of numerical methodspt
dc.subjectelement free Galerkin methodpt
dc.subjectelectromagnetic fieldspt
dc.subjectSchrodinger equationspt
dc.titleAn application of the Element Free Galerkin Method to the analysis of quantum well structuresen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationUniv Estadual Paulista, BR-15054 Sao Jose do Rio Preto, SP, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, BR-15054 Sao Jose do Rio Preto, SP, Brazil-
dc.identifier.wosWOS:000167740600053-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofProceedings of the Fourth International Conference on Electromagnetic Field Problems and Applications-
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