Please use this identifier to cite or link to this item:
- Local and global magnetic properties of Zn1-xCoxO and Mn-doped GaAs thin films
- Universidade Estadual de Campinas (UNICAMP)
- Univ Puerto Rico
- Universidade Estadual Paulista (UNESP)
- Lab Nacl Luz Sincrotron
- San Diego State Univ
- Amorphous and crystalline thin films of Mn-doped(0.5%-10%) GaAs and crystalline thin films of Zn1-xCoxO(x = 3%-20%) were investigated by means of magnetic susceptibility and electron spin resonance (ESR). For the Mn-doped GaAs samples, our results show the absence of ferromagnetic ordering for the amorphous films in the 300 > T > 2 K temperature range, in contrast to the ferromagnetism found in crystalline films for T-C < 110 K. A single ESR line with a temperature independent g-value (g similar to 2) is observed for the amorphous films, and the behavior of this ESR linewidth depends on the level of crystallinity of the film. For the Mn-doped GaAs crystalline films, only a ferromagnetic mode is observed for T < TC when the film is ferromagnetic. Turning now the Zn1-xCoxO films, ferromagnetic loops were observed at room temperature for these films. The magnetization data show an increasing of the saturation magnetization M. as a function of x reaching a maximum value for x approximate to 10%. ESR experiments at T = 300 K in the same films show a strong anisotropic ferromagnetic mode (FMR) for x = 0.10.
- IEEE Transactions on Magnetics. Piscataway: IEEE-Inst Electrical Electronics Engineers Inc., v. 42, n. 10, p. 2700-2702, 2006.
- Institute of Electrical and Electronics Engineers (IEEE)
- dilute ferromagnetic semiconductors
- electron spin resonance
- magnetization curves
- Acesso restrito
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.