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dc.contributor.authorIwamoto, W.-
dc.contributor.authorUrbano, R. R.-
dc.contributor.authorPagliuso, P. G.-
dc.contributor.authorRettori, C.-
dc.contributor.authorSamanta, K.-
dc.contributor.authorBhattacharya, P.-
dc.contributor.authorKatiyar, R. S.-
dc.contributor.authorSilva, José Humberto Dias da-
dc.contributor.authorPereira, Andre-
dc.contributor.authorAzevedo, G. de M.-
dc.contributor.authorOseroff, S. B.-
dc.identifier.citationIEEE Transactions on Magnetics. Piscataway: IEEE-Inst Electrical Electronics Engineers Inc., v. 42, n. 10, p. 2700-2702, 2006.-
dc.description.abstractAmorphous and crystalline thin films of Mn-doped(0.5%-10%) GaAs and crystalline thin films of Zn1-xCoxO(x = 3%-20%) were investigated by means of magnetic susceptibility and electron spin resonance (ESR). For the Mn-doped GaAs samples, our results show the absence of ferromagnetic ordering for the amorphous films in the 300 > T > 2 K temperature range, in contrast to the ferromagnetism found in crystalline films for T-C < 110 K. A single ESR line with a temperature independent g-value (g similar to 2) is observed for the amorphous films, and the behavior of this ESR linewidth depends on the level of crystallinity of the film. For the Mn-doped GaAs crystalline films, only a ferromagnetic mode is observed for T < TC when the film is ferromagnetic. Turning now the Zn1-xCoxO films, ferromagnetic loops were observed at room temperature for these films. The magnetization data show an increasing of the saturation magnetization M. as a function of x reaching a maximum value for x approximate to 10%. ESR experiments at T = 300 K in the same films show a strong anisotropic ferromagnetic mode (FMR) for x = 0.10.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)-
dc.sourceWeb of Science-
dc.subjectdilute ferromagnetic semiconductorspt
dc.subjectelectron spin resonancept
dc.subjectmagnetization curvespt
dc.titleLocal and global magnetic properties of Zn1-xCoxO and Mn-doped GaAs thin filmsen
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)-
dc.contributor.institutionUniv Puerto Rico-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionLab Nacl Luz Sincrotron-
dc.contributor.institutionSan Diego State Univ-
dc.description.affiliationUniv Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil-
dc.description.affiliationUniv Puerto Rico, Dept Phys, Rio Piedras, PR 00931 USA-
dc.description.affiliationUNESP, Dept Fis, Lab Filmes Semicond, BR-17099630 Bauru, SP, Brazil-
dc.description.affiliationLab Nacl Luz Sincrotron, BR-13084971 Campinas, SP, Brazil-
dc.description.affiliationSan Diego State Univ, San Diego, CA 92182 USA-
dc.description.affiliationUnespUNESP, Dept Fis, Lab Filmes Semicond, BR-17099630 Bauru, SP, Brazil-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofIEEE Transactions on Magnetics-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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