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DC Field | Value | Language |
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dc.contributor.author | Gonçalves, Rogeria R. | - |
dc.contributor.author | Carturan, Giovanni | - |
dc.contributor.author | Montagna, Maurizio | - |
dc.contributor.author | Ferrari, Maurizio | - |
dc.contributor.author | Zampedri, Luca | - |
dc.contributor.author | Pelli, Stefano | - |
dc.contributor.author | Righini, Giancarlo C. | - |
dc.contributor.author | Ribeiro, Sidney J.L. | - |
dc.contributor.author | Messaddeq, Younes | - |
dc.date.accessioned | 2014-05-20T15:24:14Z | - |
dc.date.accessioned | 2016-10-25T17:58:23Z | - |
dc.date.available | 2014-05-20T15:24:14Z | - |
dc.date.available | 2016-10-25T17:58:23Z | - |
dc.date.issued | 2004-03-01 | - |
dc.identifier | http://dx.doi.org/10.1016/S0925-3467(03)00261-1 | - |
dc.identifier.citation | Optical Materials. Amsterdam: Elsevier B.V., v. 25, n. 2, p. 131-139, 2004. | - |
dc.identifier.issn | 0925-3467 | - |
dc.identifier.uri | http://hdl.handle.net/11449/34874 | - |
dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/34874 | - |
dc.description.abstract | Silica-based sol-gel waveguides activated by Er3+ ions are attractive materials for integrated optic devices. 70SiO(2)-30HfO(2) planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-get route. The films were deposited on v-SiO2 and silica-on-silicon substrates, using dip-coating technique. The waveguides show a homogeneous surface morphology, high densification degree and uniform refractive index across the thickness. Emission in the C-telecommunication band was observed at room temperature for ill the samples upon excitation at 980 nm. The shape is found to be almost independent on erbium content, with a FWHM between 44 and 48 nm. The I-4(13/2) level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1 and 6.7 ms, depending on the erbium concentration. The waveguide deposited on silica-on-silicon substrate supports one single propagation mode at 1.5 mum with a confinement coefficient of 0.85, and a losses of about 0.8 dB/cm at 632.8 nm. (C) 2003 Elsevier B.V. All rights reserved. | en |
dc.format.extent | 131-139 | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.source | Web of Science | - |
dc.subject | optical materials | pt |
dc.subject | planar waveguides | pt |
dc.subject | erbium | pt |
dc.subject | silica-hafnia | pt |
dc.subject | sol-gel | pt |
dc.subject | silica-on-silicon | pt |
dc.title | Erbium-activated HfO2-based waveguides for photonics | en |
dc.type | outro | - |
dc.contributor.institution | CNR | - |
dc.contributor.institution | Univ Trent | - |
dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
dc.description.affiliation | CNR, IFN, I-38050 Trent, Italy | - |
dc.description.affiliation | Univ Trent, Dipartimento Ingn Mat, I-38050 Trent, Italy | - |
dc.description.affiliation | Univ Trent, Dipartimento Fis, I-38050 Trent, Italy | - |
dc.description.affiliation | Univ Trent, INFM, I-38050 Trent, Italy | - |
dc.description.affiliation | CNR, IFAC, I-50127 Florence, Italy | - |
dc.description.affiliation | UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil | - |
dc.description.affiliationUnesp | UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil | - |
dc.identifier.doi | 10.1016/S0925-3467(03)00261-1 | - |
dc.identifier.wos | WOS:000189381700006 | - |
dc.rights.accessRights | Acesso restrito | - |
dc.relation.ispartof | Optical Materials | - |
Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp |
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