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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/35049
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dc.contributor.authorSimoes, A. Z.-
dc.contributor.authorda Costa, GCC-
dc.contributor.authorRamirez, M. A.-
dc.contributor.authorVarela, José Arana-
dc.contributor.authorLongo, Elson-
dc.date.accessioned2014-05-20T15:24:26Z-
dc.date.accessioned2016-10-25T17:58:39Z-
dc.date.available2014-05-20T15:24:26Z-
dc.date.available2016-10-25T17:58:39Z-
dc.date.issued2005-03-01-
dc.identifierhttp://dx.doi.org/10.1016/j.matlet.2004.11.001-
dc.identifier.citationMaterials Letters. Amsterdam: Elsevier B.V., v. 59, n. 6, p. 656-661, 2005.-
dc.identifier.issn0167-577X-
dc.identifier.urihttp://hdl.handle.net/11449/35049-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/35049-
dc.description.abstractIn this study, the effect of bismuth content on the crystal structure, morphology and electric properties of barium-bismuth-tantalate (BBT) ceramics was explored with the aid of X-ray diffraction (XRD), scanning electron microcopy (SEM), dielectric properties and ferroelectric hysteresis loops. BaBi2Ta2O9 (BBT) ceramics have been successfully prepared by the solid-state reaction. The BBT phase was crystallized at 900 degreesC for 2 h. The excess of bismuth controls the grain size, affecting the density of the material. Measurements of dieletric constant and dieletric losses confirm that the material is a ferroeletric with a Curie temperature around 77 degreesC. The dieletric constant measured at room temperature was 400, with a dielectric loss of 0.03. Both the phase-transition behaviour and ferroelectric properties, such as spontaneous polarization (P-s), showed a dependence on Bi content. (C) 2004 Elsevier B.V. All rights reserved.en
dc.format.extent656-661-
dc.language.isoeng-
dc.publisherElsevier B.V.-
dc.sourceWeb of Science-
dc.subjectceramicspt
dc.subjectelectrical propertiespt
dc.subjectfatiguept
dc.subjectsinteringpt
dc.titleEffect of the excess of bismuth on the morphology and properties of the BaBi2Ta2O9 ceramicsen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)-
dc.description.affiliationUniv Estadual Paulista, Inst Quim Araraquara, BR-14801970 Araraquara, SP, Brazil-
dc.description.affiliationUniv Estadual Paulista, Pos Grad Ciência & Tecnol Mat, BR-1703336 Bauru, SP, Brazil-
dc.description.affiliationUniv Fed Sao Carlos, Dept Quim, BR-13585905 Sao Carlos, SP, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, Inst Quim Araraquara, BR-14801970 Araraquara, SP, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, Pos Grad Ciência & Tecnol Mat, BR-1703336 Bauru, SP, Brazil-
dc.identifier.doi10.1016/j.matlet.2004.11.001-
dc.identifier.wosWOS:000226802500011-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofMaterials Letters-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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