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DC Field | Value | Language |
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dc.contributor.author | Simoes, A. Z. | - |
dc.contributor.author | Ramirez, M. A. | - |
dc.contributor.author | Stojanovic, B. D. | - |
dc.contributor.author | Longo, Elson | - |
dc.contributor.author | Varela, José Arana | - |
dc.date.accessioned | 2014-05-20T15:25:57Z | - |
dc.date.accessioned | 2016-10-25T18:00:34Z | - |
dc.date.available | 2014-05-20T15:25:57Z | - |
dc.date.available | 2016-10-25T18:00:34Z | - |
dc.date.issued | 2006-10-15 | - |
dc.identifier | http://dx.doi.org/10.1016/j.apsusc.2005.11.055 | - |
dc.identifier.citation | Applied Surface Science. Amsterdam: Elsevier B.V., v. 252, n. 24, p. 8471-8475, 2006. | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | http://hdl.handle.net/11449/36265 | - |
dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/36265 | - |
dc.description.abstract | Lanthanum doped bismuth titanate thin films (Bi3.25La0.75Ti3O12-BLT) were produced by the polymeric precursor method and crystallized in a domestic microwave oven and in conventional furnace. Using platinum coated silicon substrates configuration, ferroelectric properties of the films were determined with remanent polarization P-r and a coercive field E-c of 3.9 mu C/cm(2) and 70 kV/cm for the film annealed in the microwave oven and 20 mu C/cm(2) and 52 kV/cm for the film annealed in conventional furnace, respectively. The films annealed in conventional furnace exhibited excellent retention-free characteristics at low infant periods indicating that BLT thin films can be a promise material for use in nonvolatile memories. on the other hand, the pinning of domains wall causes a strong decay at low infant periods for the films annealed in the microwave furnace which makes undesireable the application for future FeRAMS memories. (c) 2005 Elsevier B.V. All rights reserved. | en |
dc.format.extent | 8471-8475 | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.source | Web of Science | - |
dc.subject | thin films | pt |
dc.subject | atomic force microscopy | pt |
dc.subject | dielectric properties | pt |
dc.subject | fatigue | pt |
dc.title | The effect of microwave annealing on the electrical characteristics of lanthanum doped bismuth titanate films obtained by the polymeric precursor method | en |
dc.type | outro | - |
dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
dc.description.affiliation | Paulista State Univ, UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil | - |
dc.description.affiliation | Paulista State Univ, UNESP, BR-1703336 Bauru, SP, Brazil | - |
dc.description.affiliationUnesp | Paulista State Univ, UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil | - |
dc.description.affiliationUnesp | Paulista State Univ, UNESP, BR-1703336 Bauru, SP, Brazil | - |
dc.identifier.doi | 10.1016/j.apsusc.2005.11.055 | - |
dc.identifier.wos | WOS:000241888000016 | - |
dc.rights.accessRights | Acesso restrito | - |
dc.relation.ispartof | Applied Surface Science | - |
Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp |
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