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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/36496
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dc.contributor.authorLeite, E. R.-
dc.contributor.authorNascimento, A. M.-
dc.contributor.authorBueno, Paulo Roberto-
dc.contributor.authorLongo, Elson-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-20T15:26:19Z-
dc.date.accessioned2016-10-25T18:00:53Z-
dc.date.available2014-05-20T15:26:19Z-
dc.date.available2016-10-25T18:00:53Z-
dc.date.issued1999-06-01-
dc.identifierhttp://dx.doi.org/10.1023/A:1008933004042-
dc.identifier.citationJournal of Materials Science-materials In Electronics. Dordrecht: Kluwer Academic Publ, v. 10, n. 4, p. 321-327, 1999.-
dc.identifier.issn0957-4522-
dc.identifier.urihttp://hdl.handle.net/11449/36496-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/36496-
dc.description.abstractThe non-ohmic properties of the 98.95% SnO2 + 1.0 CoO + 0.05 Nb2O5 (all in mole%) system, as well as the influence of sintering temperature and atmosphere on these properties, were characterized in this study. The maximum non-linear coefficient (alpha = 32) was obtained for a sintering temperature of 1300 degrees C in an oxygen atmosphere and this maximum is associated with the presence of O in SnO2 grain boundaries, as interface defects. Experimental results also indicate thermionic-type conduction mechanisms, which are associated with the potential barrier of Schottky or Poole-Frenkel types.en
dc.format.extent321-327-
dc.language.isoeng-
dc.publisherKluwer Academic Publ-
dc.sourceWeb of Science-
dc.titleThe influence of sintering process and atmosphere on the non-ohmic properties of SnO2 based varistoren
dc.typeoutro-
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationUniv Fed Sao Carlos, Dept Quim, BR-13560 Sao Carlos, SP, Brazil-
dc.description.affiliationUniv Estadual Paulista, Inst Quim, BR-14800 Araraquara, SP, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, Inst Quim, BR-14800 Araraquara, SP, Brazil-
dc.identifier.doi10.1023/A:1008933004042-
dc.identifier.wosWOS:000081340300013-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofJournal of Materials Science: Materials in Electronics-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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