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dc.contributor.authorCampomanes, R. R.-
dc.contributor.authorUgucione, J.-
dc.contributor.authorda Silva, JHD-
dc.identifier.citationJournal of Non-crystalline Solids. Amsterdam: Elsevier B.V., v. 304, n. 1-3, p. 259-264, 2002.-
dc.description.abstractThis work reports the changes in the optical properties produced by annealing of amorphous GaAs at temperatures smaller than or just sufficient to produce crystallization of the material. The films were grown by the flash evaporation technique on glass substrates at room temperature. Optical and structural changes of our samples were monitored through photothermal deflection spectroscopy, optical transmittance and reflectance and X-ray diffraction (XRD). The structural results from XRD detected no crystallization of the films for temperatures up to 240 degreesC. We have observed consistent changes in the optical gap and Urbach energy of the annealed film. The optical gap increases with increasing annealing temperature from 1.17 to 1.32 eV. The Urbach energy decrease from 120 meV (as-grown film) to 105 meV (anneal at 200 degreesC). We propose that these changes are due to a diminution of the tail state defects and/or the relaxation of strained bonds. (C) 2002 Elsevier B.V. B.V. All rights reserved.en
dc.publisherElsevier B.V.-
dc.sourceWeb of Science-
dc.titleLow temperature annealing of amorphous gallium arsenide filmsen
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationUniv Estadual Paulista, Fac Ciências, Dept Fis, BR-17033360 Bauru, SP, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, Fac Ciências, Dept Fis, BR-17033360 Bauru, SP, Brazil-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofJournal of Non-Crystalline Solids-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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