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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/38104
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dc.contributor.authorScalvi, Luis Vicente de Andrade-
dc.contributor.authorOliveira, L.-
dc.contributor.authorLi, M. S.-
dc.contributor.authorManasreh, M. O.-
dc.contributor.authorvonBardeleben, H. J.-
dc.contributor.authorPomrenke, G. S.-
dc.contributor.authorLannoo, M.-
dc.contributor.authorTalwar, D. N.-
dc.date.accessioned2014-05-20T15:28:16Z-
dc.date.accessioned2016-10-25T18:03:16Z-
dc.date.available2014-05-20T15:28:16Z-
dc.date.available2016-10-25T18:03:16Z-
dc.date.issued1994-01-01-
dc.identifier.citationPhysics and Applications of Defects In Advanced Semiconductors. Pittsburgh: Materials Research Soc, v. 325, p. 285-290, 1994.-
dc.identifier.issn0272-9172-
dc.identifier.urihttp://hdl.handle.net/11449/38104-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/38104-
dc.format.extent285-290-
dc.language.isoeng-
dc.publisherMaterials Research Society-
dc.sourceWeb of Science-
dc.titleDipole relaxation current in n-type AlxGa1-xAsen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationUNESP,DEPT FIS,BR-17033 BAURU,SP,BRAZIL-
dc.description.affiliationUnespUNESP,DEPT FIS,BR-17033 BAURU,SP,BRAZIL-
dc.identifier.wosWOS:A1994BA45Z00038-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofPhysics and Applications of Defects In Advanced Semiconductors-
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