Please use this identifier to cite or link to this item:
http://acervodigital.unesp.br/handle/11449/38104
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Scalvi, Luis Vicente de Andrade | - |
dc.contributor.author | Oliveira, L. | - |
dc.contributor.author | Li, M. S. | - |
dc.contributor.author | Manasreh, M. O. | - |
dc.contributor.author | vonBardeleben, H. J. | - |
dc.contributor.author | Pomrenke, G. S. | - |
dc.contributor.author | Lannoo, M. | - |
dc.contributor.author | Talwar, D. N. | - |
dc.date.accessioned | 2014-05-20T15:28:16Z | - |
dc.date.accessioned | 2016-10-25T18:03:16Z | - |
dc.date.available | 2014-05-20T15:28:16Z | - |
dc.date.available | 2016-10-25T18:03:16Z | - |
dc.date.issued | 1994-01-01 | - |
dc.identifier.citation | Physics and Applications of Defects In Advanced Semiconductors. Pittsburgh: Materials Research Soc, v. 325, p. 285-290, 1994. | - |
dc.identifier.issn | 0272-9172 | - |
dc.identifier.uri | http://hdl.handle.net/11449/38104 | - |
dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/38104 | - |
dc.format.extent | 285-290 | - |
dc.language.iso | eng | - |
dc.publisher | Materials Research Society | - |
dc.source | Web of Science | - |
dc.title | Dipole relaxation current in n-type AlxGa1-xAs | en |
dc.type | outro | - |
dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
dc.description.affiliation | UNESP,DEPT FIS,BR-17033 BAURU,SP,BRAZIL | - |
dc.description.affiliationUnesp | UNESP,DEPT FIS,BR-17033 BAURU,SP,BRAZIL | - |
dc.identifier.wos | WOS:A1994BA45Z00038 | - |
dc.rights.accessRights | Acesso restrito | - |
dc.relation.ispartof | Physics and Applications of Defects In Advanced Semiconductors | - |
Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp |
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.