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http://acervodigital.unesp.br/handle/11449/38191
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DC Field | Value | Language |
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dc.contributor.author | Costa, G. C. | - |
dc.contributor.author | Simoes, A. Z. | - |
dc.contributor.author | Ries, A. | - |
dc.contributor.author | Riccardi, C. S. | - |
dc.contributor.author | Stojanovic, B. D. | - |
dc.contributor.author | Cilense, M. | - |
dc.contributor.author | Zaghete, M. | - |
dc.contributor.author | Varela, José Arana | - |
dc.date.accessioned | 2014-05-20T15:28:23Z | - |
dc.date.accessioned | 2016-10-25T18:03:23Z | - |
dc.date.available | 2014-05-20T15:28:23Z | - |
dc.date.available | 2016-10-25T18:03:23Z | - |
dc.date.issued | 2003-01-01 | - |
dc.identifier | http://dx.doi.org/10.1080/10584580390229978 | - |
dc.identifier.citation | Integrated Ferroelectrics. Abingdon: Taylor & Francis Ltd, v. 51, p. 103-112, 2003. | - |
dc.identifier.issn | 1058-4587 | - |
dc.identifier.uri | http://hdl.handle.net/11449/38191 | - |
dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/38191 | - |
dc.description.abstract | The BBT films were prepared by a spin-coating process from the polymeric precursor method (Pechini process). In order to study the influence of the temperature on the BBT microstructure and electrical properties, the films were deposited on platinum coated silicon substrates and annealed from 700degreesC to 800degreesC for 2 hours in oxygen atmosphere. The crystallinity of the films was examined by X-ray diffraction while the surface morphology was analysed by atomic force microscope. The dielectric properties and dissipation factor of BaBi2Ta2O9 films at 1 MHz were observed. The polarization-electric field hysteresis loops revealed the ferroelectric characteristics of BaBi2Ta2O9 thin films. | en |
dc.format.extent | 103-112 | - |
dc.language.iso | eng | - |
dc.publisher | Taylor & Francis Ltd | - |
dc.source | Web of Science | - |
dc.subject | BBT | pt |
dc.subject | thin films | pt |
dc.subject | electrical properties | pt |
dc.title | Influence of temperature on the microstructure and electrical properties of BBT thin films | en |
dc.type | outro | - |
dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
dc.contributor.institution | University of Belgrade | - |
dc.description.affiliation | Univ Estadual Paulista, UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil | - |
dc.description.affiliation | Univ Belgrade, Ctr Multidisciplinary Studies, YU-11001 Belgrade, Yugoslavia | - |
dc.description.affiliationUnesp | Univ Estadual Paulista, UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil | - |
dc.identifier.doi | 10.1080/10584580390229978 | - |
dc.identifier.wos | WOS:000185295400009 | - |
dc.rights.accessRights | Acesso restrito | - |
dc.relation.ispartof | Integrated Ferroelectrics | - |
Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp |
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