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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/38199
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dc.contributor.authorMazon, T.-
dc.contributor.authorJoanni, E.-
dc.contributor.authorFernandes, JRA-
dc.contributor.authorZaghete, M. A.-
dc.contributor.authorCilense, M.-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-20T15:28:23Z-
dc.date.accessioned2016-10-25T18:03:24Z-
dc.date.available2014-05-20T15:28:23Z-
dc.date.available2016-10-25T18:03:24Z-
dc.date.issued2003-01-01-
dc.identifierhttp://dx.doi.org/10.1080/00150190390238405-
dc.identifier.citationFerroelectrics. Abingdon: Taylor & Francis Ltd, v. 293, p. 201-207, 2003.-
dc.identifier.issn0015-0193-
dc.identifier.urihttp://hdl.handle.net/11449/38199-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/38199-
dc.description.abstractThe RF-magnetron sputtering technique has been used to deposit polycrystalline thin films of layered-structured ferroelectric BaBi2Nb2O9 (BBN). The XRD patterns for the films annealed at 700degreesC for 1 hour show the presence of the BBN phase as well as the BaNb2O6 secondary phase. A better crystallization of the BBN phase and an inhibition of the secondary phase is obtained with the increase of temperature. The surface of the prepared films was rather dense and smooth with no cracks. The 300 nm thick BBN thin films exhibited a room-temperature dielectric constant of about 779 with a dissipation factor of 0.09 at a frequency of 100 kHz.en
dc.format.extent201-207-
dc.language.isoeng-
dc.publisherTaylor & Francis Ltd-
dc.sourceWeb of Science-
dc.subjectBaBi2Nb2O9pt
dc.subjectthin filmspt
dc.subjectdielectric propertiespt
dc.subjectRF-magnetron sputteringpt
dc.titleGrowth and characterization of BaBi2Nb2O9 thin films made by RF-magnetron sputteringen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionUniv Tras os Montes & Alto Douro-
dc.contributor.institutionUNESC Porto-
dc.description.affiliationUniv Estadual Paulista, UNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil-
dc.description.affiliationUniv Tras os Montes & Alto Douro, UTAD, Dept Fis, P-5001911 Vila Real, Portugal-
dc.description.affiliationUNESC Porto, Unidade Optoelect & Sistemas Elect, P-4169007 Oporto, Portugal-
dc.description.affiliationUnespUniv Estadual Paulista, UNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil-
dc.identifier.doi10.1080/00150190390238405-
dc.identifier.wosWOS:000186526300020-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofFerroelectrics-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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