Please use this identifier to cite or link to this item:
http://acervodigital.unesp.br/handle/11449/38267
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, EJH | - |
dc.contributor.author | Pontes, F. M. | - |
dc.contributor.author | Leite, E. R. | - |
dc.contributor.author | Longo, Elson | - |
dc.contributor.author | Magnani, R. | - |
dc.contributor.author | Pizani, P. S. | - |
dc.contributor.author | Varela, José Arana | - |
dc.date.accessioned | 2014-05-20T15:28:28Z | - |
dc.date.accessioned | 2016-10-25T18:03:31Z | - |
dc.date.available | 2014-05-20T15:28:28Z | - |
dc.date.available | 2016-10-25T18:03:31Z | - |
dc.date.issued | 2004-04-01 | - |
dc.identifier | http://dx.doi.org/10.1016/j.matlet.2003.10.047 | - |
dc.identifier.citation | Materials Letters. Amsterdam: Elsevier B.V., v. 58, n. 11, p. 1715-1721, 2004. | - |
dc.identifier.issn | 0167-577X | - |
dc.identifier.uri | http://hdl.handle.net/11449/38267 | - |
dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/38267 | - |
dc.description.abstract | Barium titanate thin films were prepared by the polymeric precursor method and deposited onto Pt/Ti/SiO2/Si substrates. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FT-IR) and micro-Raman spectroscopy were used to investigate the formation of the BaTiO3 perovskite phase. Afterwards, the films were submitted to post-annealing treatments in oxygen and nitrogen atmospheres at 300 degreesC for 2 h, and had their dielectric properties measured. It was observed that the electric properties of the thin films are very sensitive to the nature of the post-annealing atmosphere. This study demonstrates that post-annealing in an oxygen atmosphere increases the dielectric relaxation phenomenon and that post-annealing in a nitrogen atmosphere produces a slight dielectric relaxation. (C) 2004 Elsevier B.V All rights reserved. | en |
dc.format.extent | 1715-1721 | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.source | Web of Science | - |
dc.subject | barium titanate | pt |
dc.subject | dielectric properties | pt |
dc.subject | conduction mechanism | pt |
dc.subject | post-annealing | pt |
dc.title | Effects of post-annealing on the dielectric properties of Au/BaTiO3/Pt thin film capacitors | en |
dc.type | outro | - |
dc.contributor.institution | Universidade Federal de São Carlos (UFSCar) | - |
dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
dc.description.affiliation | UFSCar, Dept Chem, CMDMC, LIEC, BR-13565905 Sao Carlos, SP, Brazil | - |
dc.description.affiliation | UFSCar, Dept Phys, BR-13565905 Sao Carlos, SP, Brazil | - |
dc.description.affiliation | UNESP, Inst Chem, Araraquara, SP, Brazil | - |
dc.description.affiliationUnesp | UNESP, Inst Chem, Araraquara, SP, Brazil | - |
dc.identifier.doi | 10.1016/j.matlet.2003.10.047 | - |
dc.identifier.wos | WOS:000220244900011 | - |
dc.rights.accessRights | Acesso restrito | - |
dc.relation.ispartof | Materials Letters | - |
Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp |
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.