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dc.contributor.authorTabata, Américo Sheitiro-
dc.contributor.authorMartins, M. R.-
dc.contributor.authorOliveira, José Brás Barreto de-
dc.contributor.authorLamas, T. E.-
dc.contributor.authorDuarte, C. A.-
dc.contributor.authorda Silva, E. C. F.-
dc.contributor.authorGusev, G. M.-
dc.date.accessioned2014-05-20T15:28:50Z-
dc.date.accessioned2016-10-25T18:04:02Z-
dc.date.available2014-05-20T15:28:50Z-
dc.date.available2016-10-25T18:04:02Z-
dc.date.issued2007-11-01-
dc.identifierhttp://dx.doi.org/10.1063/1.2809418-
dc.identifier.citationJournal of Applied Physics. Melville: Amer Inst Physics, v. 102, n. 9, 5 p., 2007.-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/11449/38569-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/38569-
dc.description.abstractPhotoluminescence measurements at different temperatures have been performed to investigate the optical response of a two-dimensional electron gas in n-type wide parabolic quantum wells. A series of samples with different well widths in the range of 1000-3000 A was analyzed. Many-body effects, usually observed in the recombination process of a two-dimensional electron gas, appear as a strong enhancement in the photoluminescence spectra at the Fermi level at low temperature only in the thinnest parabolic quantum wells. The suppression of the many-body effect in the thicker quantum wells was attributed to the decrease of the overlap between the wavefunctions of the photocreated holes and the two-dimensional electrons belonging to the highest occupied electron subband. (C) 2007 American Institute of Physics.en
dc.format.extent5-
dc.language.isoeng-
dc.publisherAmerican Institute of Physics (AIP)-
dc.sourceWeb of Science-
dc.titleMany-body effects in wide parabolic AlGaAs quantum wellsen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionUniversidade de São Paulo (USP)-
dc.description.affiliationUniv Estadual Paulista, BR-17033360 São Paulo, Brazil-
dc.description.affiliationUniv São Paulo, Lab Novos Mat Semicond, Inst Fis, BR-05315970 São Paulo, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, BR-17033360 São Paulo, Brazil-
dc.identifier.doi10.1063/1.2809418-
dc.identifier.wosWOS:000250983700050-
dc.rights.accessRightsAcesso restrito-
dc.identifier.fileWOS000250983700050.pdf-
dc.relation.ispartofJournal of Applied Physics-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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