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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/39252
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dc.contributor.authorTabata, A.-
dc.contributor.authorLeite, JR-
dc.contributor.authorLima, A. P.-
dc.contributor.authorSilveira, E.-
dc.contributor.authorLemos, V-
dc.contributor.authorFrey, T.-
dc.contributor.authorAs, D. J.-
dc.contributor.authorSchikora, D.-
dc.contributor.authorLischka, K.-
dc.date.accessioned2014-05-20T15:29:45Z-
dc.date.accessioned2016-10-25T18:05:01Z-
dc.date.available2014-05-20T15:29:45Z-
dc.date.available2016-10-25T18:05:01Z-
dc.date.issued1999-08-23-
dc.identifierhttp://dx.doi.org/10.1063/1.124608-
dc.identifier.citationApplied Physics Letters. Woodbury: Amer Inst Physics, v. 75, n. 8, p. 1095-1097, 1999.-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/11449/39252-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/39252-
dc.description.abstractTransverse-optical (TO) and longitudinal-optical (LO) phonons of zinc blende InxGa1-xN (0 less than or equal to x less than or equal to 0.31) layers are observed through first-order micro-Raman scattering experiments. The samples are grown by molecular-beam epitaxy on GaAs (001) substrates, and x-ray diffraction measurements are performed to determine the epilayer alloy composition. Both the TO and LO phonons exhibit a one-mode-type behavior, and their frequencies display a linear dependence on the composition. The Raman data reported here are used to predict the A(1) (TO) and E-1 (TO) phonon frequencies of the hexagonal InxGa1-xN alloy. (C) 1999 American Institute of Physics. [S0003-6951(99)01234-6].en
dc.format.extent1095-1097-
dc.language.isoeng-
dc.publisherAmerican Institute of Physics (AIP)-
dc.sourceWeb of Science-
dc.titleRaman phonon modes of zinc blende InxGa1-xN alloy epitaxial layersen
dc.typeoutro-
dc.contributor.institutionUniversidade de São Paulo (USP)-
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)-
dc.contributor.institutionUniv Gesamthsch Paderborn-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationUniv São Paulo, Inst Fis, BR-05315970 São Paulo, Brazil-
dc.description.affiliationUniv Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil-
dc.description.affiliationUniv Gesamthsch Paderborn, FB Phys 6, D-33098 Paderborn, Germany-
dc.description.affiliationUNESP, São Paulo, Brazil-
dc.description.affiliationUnespUNESP, São Paulo, Brazil-
dc.identifier.doi10.1063/1.124608-
dc.identifier.wosWOS:000082037500022-
dc.rights.accessRightsAcesso restrito-
dc.identifier.fileWOS000082037500022.pdf-
dc.relation.ispartofApplied Physics Letters-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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