You are in the accessibility menu

Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/39417
Full metadata record
DC FieldValueLanguage
dc.contributor.authorRoos, M.-
dc.contributor.authorBaranauskas, V.-
dc.contributor.authorFontana, M.-
dc.contributor.authorCeragioli, H. J.-
dc.contributor.authorPeterlevitz, A. C.-
dc.contributor.authorMallik, K.-
dc.contributor.authorDegasperi, F. T.-
dc.date.accessioned2014-05-20T15:29:57Z-
dc.date.accessioned2016-10-25T18:05:17Z-
dc.date.available2014-05-20T15:29:57Z-
dc.date.available2016-10-25T18:05:17Z-
dc.date.issued2007-07-15-
dc.identifierhttp://dx.doi.org/10.1016/j.apsusc.2007.03.023-
dc.identifier.citationApplied Surface Science. Amsterdam: Elsevier B.V., v. 253, n. 18, p. 7381-7386, 2007.-
dc.identifier.issn0169-4332-
dc.identifier.urihttp://hdl.handle.net/11449/39417-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/39417-
dc.description.abstractField emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (N-B) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (E-th) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500 nA cm(-2) were obtained using electric fields less than 8 V/mu m. (c) 2007 Elsevier B.V. All rights reserved.en
dc.format.extent7381-7386-
dc.language.isoeng-
dc.publisherElsevier B.V.-
dc.sourceWeb of Science-
dc.subjectboron doped diamond surfacept
dc.subjectelectron field emissionpt
dc.subjectchemical vapor deposited diamondpt
dc.subjectthreshold field for electron emissionpt
dc.subjectemission properties of surface sitespt
dc.titleElectron field emission from boron doped microcrystalline diamonden
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)-
dc.contributor.institutionUniv Southampton-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationUniv Estadual Campinas, Dept Semicond Instrumentos & Foton, Fac Elect & Comp Engn, BR-13083852 Campinas, Brazil-
dc.description.affiliationUniv Southampton, Sch Elect & Comp Sci, Nanoscale Syst Integrat Grp, Southampton SO17 1BJ, Hants, England-
dc.description.affiliationUNESP, CEETEPS, FATEC SP, Fac Tecnol São Paulo, BR-01124060 Sao Carlos, SP, Brazil-
dc.description.affiliationUnespUNESP, CEETEPS, FATEC SP, Fac Tecnol São Paulo, BR-01124060 Sao Carlos, SP, Brazil-
dc.identifier.doi10.1016/j.apsusc.2007.03.023-
dc.identifier.wosWOS:000247863800006-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofApplied Surface Science-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

There are no files associated with this item.
Show simple item record Show full item record   View Statistics
 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.