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dc.contributor.authorSouza, ECF-
dc.contributor.authorSimoes, A. Z.-
dc.contributor.authorCilense, M.-
dc.contributor.authorLongo, Elson-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-20T15:30:07Z-
dc.date.accessioned2016-10-25T18:05:31Z-
dc.date.available2014-05-20T15:30:07Z-
dc.date.available2016-10-25T18:05:31Z-
dc.date.issued2004-11-15-
dc.identifierhttp://dx.doi.org/10.1016/j.matchemphys.2004.06.035-
dc.identifier.citationMaterials Chemistry and Physics. Lausanne: Elsevier B.V. Sa, v. 88, n. 1, p. 155-159, 2004.-
dc.identifier.issn0254-0584-
dc.identifier.urihttp://hdl.handle.net/11449/39566-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/39566-
dc.description.abstractPure and Nb doped PbZr0.4Ti0.603 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO2/Si (100) substrates and annealed at 700 degreesC. The films are oriented in (1 1 0) and (1 0 0) direction. The electric properties of PZT thin films show strong dependence of the crystallographic orientation. The P-E hysteresis loops for the thin film with composition PbZr0.39Ti0.6Nb0.103 showed good saturation, with values for coercive field (E-c) equal to 60 KV cm(-1) and for remanent polarization (P-r) equal to 20 muC cm(-2). The measured dielectric constant (epsilon) is 1084 for this film. These results show good potential for application in FERAM. (C) 2004 Elsevier B.V. All rights reserved.en
dc.format.extent155-159-
dc.language.isoeng-
dc.publisherElsevier B.V.-
dc.sourceWeb of Science-
dc.subjectPZTpt
dc.subjectNb doped PZTpt
dc.subjectFERAMpt
dc.subjectpolymeric precursorpt
dc.titleThe effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursorsen
dc.typeoutro-
dc.contributor.institutionLIEC-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationLIEC, CMDMC, Araraquara, SP, Brazil-
dc.description.affiliationUNESP, Inst Quim, BR-14800900 Araraquara, SP, Brazil-
dc.description.affiliationUnespUNESP, Inst Quim, BR-14800900 Araraquara, SP, Brazil-
dc.identifier.doi10.1016/j.matchemphys.2004.06.035-
dc.identifier.wosWOS:000224370900027-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofMaterials Chemistry and Physics-
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