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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/39627
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dc.contributor.authorSimoes, A. Z.-
dc.contributor.authorRamirez, M. A.-
dc.contributor.authorRiccardi, C. S.-
dc.contributor.authorRies, A.-
dc.contributor.authorLongo, Elson-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-20T15:30:11Z-
dc.date.accessioned2016-10-25T18:05:37Z-
dc.date.available2014-05-20T15:30:11Z-
dc.date.available2016-10-25T18:05:37Z-
dc.date.issued2005-08-15-
dc.identifierhttp://dx.doi.org/10.1016/j.matchemphys.2005.01.043-
dc.identifier.citationMaterials Chemistry and Physics. Lausanne: Elsevier B.V. Sa, v. 92, n. 2-3, p. 373-378, 2005.-
dc.identifier.issn0254-0584-
dc.identifier.urihttp://hdl.handle.net/11449/39627-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/39627-
dc.description.abstractThe (1 1 7) and (0 0 1 0)-oriented Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by using a polymeric precursor solution under appropriate crystallization conditions. Atomic force microscopy and scanning electron microscopy showed relatively large grains, which is typical for this system. The capacitance dependence on voltage is strongly non-linear, confirming the ferroelectric properties of the films resulting from the domain switching. The (1 1 7)-oriented films exhibited a higher remanent polarization (23.7 μ C cm(-2)) than the (0 0 1 0)-oriented films (11.8 μ C cm(-2)). Fatigue tests revealed that the temperature of thermal treatment and degree of orientation affect the performance of the device. © 2005 Elsevier B.V. All rights reserved.en
dc.format.extent373-378-
dc.language.isoeng-
dc.publisherElsevier B.V.-
dc.sourceWeb of Science-
dc.subjectbismuth titanatept
dc.subjectthin filmpt
dc.subjectdielectric propertiespt
dc.subjectferroelectric propertiespt
dc.titleInfluence of temperature on the dielectric and ferroelectric properties of bismuth titanate thin films obtained by the polymeric precursor methoden
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)-
dc.description.affiliationUniv Estadual Paulista, Inst Chem, BR-14801970 Araraquara, SP, Brazil-
dc.description.affiliationUniv Fed Sao Carlos, Dept Chem, BR-13565905 Sao Carlos, SP, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, Inst Chem, BR-14801970 Araraquara, SP, Brazil-
dc.identifier.doi10.1016/j.matchemphys.2005.01.043-
dc.identifier.wosWOS:000229103900013-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofMaterials Chemistry and Physics-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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