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dc.contributor.authorMendes, A. C.-
dc.contributor.authorMaia, L. J. Q.-
dc.contributor.authorMessaddeq, S. H.-
dc.contributor.authorMessaddeq, Younes-
dc.contributor.authorRibeiro, Sidney José Lima-
dc.contributor.authorLi, M. Siu-
dc.date.accessioned2014-05-20T15:30:30Z-
dc.date.accessioned2016-10-25T18:06:01Z-
dc.date.available2014-05-20T15:30:30Z-
dc.date.available2016-10-25T18:06:01Z-
dc.date.issued2011-12-01-
dc.identifierhttp://dx.doi.org/10.1016/j.physb.2011.08.091-
dc.identifier.citationPhysica B-condensed Matter. Amsterdam: Elsevier B.V., v. 406, n. 23, p. 4381-4386, 2011.-
dc.identifier.issn0921-4526-
dc.identifier.urihttp://hdl.handle.net/11449/39856-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/39856-
dc.description.abstractOxysulfide systems undergo structural transformations upon illumination with laser light of near bandgap energy, as well as chalcogenide materials (glasses and films). In this paper, photoinduced effects such as photoexpansion and photobleaching were observed in GeS2+Ga2O3 (GGSO) films synthesized by electron beam evaporation. A surface expansion of the thin films and a shift to shorter wavelengths of the optical absorption edge were observed as a result of UV laser irradiation (wavelength of 351 nm) and they are dependent on laser power density, exposure time and film composition. These parameters were varied to evaluate and enhance the observed effects. In addition, the irradiated GGSO samples exhibited a decrease in refractive index, measured with a prism-coupling technique, which makes these films suitable candidates for applications as gratings and waveguides in integrated optics. (C) 2011 Elsevier B.V. All rights reserved.en
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
dc.format.extent4381-4386-
dc.language.isoeng-
dc.publisherElsevier B.V.-
dc.sourceWeb of Science-
dc.subjectOxysulfideen
dc.subjectOptical bandgapen
dc.subjectPhotoexpansionen
dc.subjectPhotobleachingen
dc.subjectThin filmsen
dc.titlePhotoexpansion and photobleaching effects in oxysulfide thin films of the GeS2+Ga2O3 systemen
dc.typeoutro-
dc.contributor.institutionUniversidade de São Paulo (USP)-
dc.contributor.institutionUniversidade Federal de Goiás (UFG)-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationUniv São Paulo, Inst Fis São Carlos, BR-13566590 São Carlos, SP, Brazil-
dc.description.affiliationUniversidade Federal de Goiás (UFG), Inst Fis, BR-74001970 Goiania, Go, Brazil-
dc.description.affiliationUNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil-
dc.description.affiliationUnespUNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil-
dc.description.sponsorshipIdFAPESP: 05/58396-0-
dc.identifier.doi10.1016/j.physb.2011.08.091-
dc.identifier.wosWOS:000296872800009-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofPhysica B: Condensed Matter-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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