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http://acervodigital.unesp.br/handle/11449/40011Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Tabata, A. | - |
| dc.contributor.author | Teles, L. K. | - |
| dc.contributor.author | Scolfaro, LMR | - |
| dc.contributor.author | Leite, JR | - |
| dc.contributor.author | Kharchenko, A. | - |
| dc.contributor.author | Frey, T. | - |
| dc.contributor.author | As, D. J. | - |
| dc.contributor.author | Schikora, D. | - |
| dc.contributor.author | Lischka, K. | - |
| dc.contributor.author | Furthmuller, J. | - |
| dc.contributor.author | Bechstedt, F. | - |
| dc.date.accessioned | 2014-05-20T15:30:41Z | - |
| dc.date.accessioned | 2016-10-25T18:06:16Z | - |
| dc.date.available | 2014-05-20T15:30:41Z | - |
| dc.date.available | 2016-10-25T18:06:16Z | - |
| dc.date.issued | 2002-02-04 | - |
| dc.identifier | http://dx.doi.org/10.1063/1.1436270 | - |
| dc.identifier.citation | Applied Physics Letters. Melville: Amer Inst Physics, v. 80, n. 5, p. 769-771, 2002. | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | http://hdl.handle.net/11449/40011 | - |
| dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/40011 | - |
| dc.description.abstract | Phase separation suppression due to external biaxial strain is observed in InxGa1-xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the InxGa1-xN layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors. (C) 2002 American Institute of Physics. | en |
| dc.format.extent | 769-771 | - |
| dc.language.iso | eng | - |
| dc.publisher | American Institute of Physics (AIP) | - |
| dc.source | Web of Science | - |
| dc.title | Phase separation suppression in InGaN epitaxial layers due to biaxial strain | en |
| dc.type | outro | - |
| dc.contributor.institution | Universidade de São Paulo (USP) | - |
| dc.contributor.institution | Univ Gesamthsch Paderborn | - |
| dc.contributor.institution | Univ Jena | - |
| dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
| dc.description.affiliation | Univ São Paulo, Inst Fis, BR-05315970 São Paulo, Brazil | - |
| dc.description.affiliation | Univ Gesamthsch Paderborn, D-33095 Paderborn, Germany | - |
| dc.description.affiliation | Univ Jena, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany | - |
| dc.description.affiliation | Univ Estadual Paulista, BR-17033360 Bauva, SP, Brazil | - |
| dc.description.affiliationUnesp | Univ Estadual Paulista, BR-17033360 Bauva, SP, Brazil | - |
| dc.identifier.doi | 10.1063/1.1436270 | - |
| dc.identifier.wos | WOS:000173617700022 | - |
| dc.rights.accessRights | Acesso restrito | - |
| dc.identifier.file | WOS000173617700022.pdf | - |
| dc.relation.ispartof | Applied Physics Letters | - |
| Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp | |
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