You are in the accessibility menu

Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/42187
Full metadata record
DC FieldValueLanguage
dc.contributor.authorSimões, Alexandre Zirpoli-
dc.contributor.authorCavalcante, L. S.-
dc.contributor.authorMoura, F.-
dc.contributor.authorLongo, Elson-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-20T15:33:37Z-
dc.date.accessioned2016-10-25T18:10:14Z-
dc.date.available2014-05-20T15:33:37Z-
dc.date.available2016-10-25T18:10:14Z-
dc.date.issued2011-04-28-
dc.identifierhttp://dx.doi.org/10.1016/j.jallcom.2011.02.030-
dc.identifier.citationJournal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 509, n. 17, p. 5326-5335, 2011.-
dc.identifier.issn0925-8388-
dc.identifier.urihttp://hdl.handle.net/11449/42187-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/42187-
dc.description.abstractIn this paper, we report on the structure, ferroelectric/magnetoelectric properties and improvement of leakage current density of (Bi0.85Nd0.15)FeO3 (BNFO) thin films deposited on Pt(1 1 1)/Ti/SiO2/Si substrates from the polymeric precursor method. X-ray patterns and Rietveld refinement indicated that BNFO thin films with a tetragonal structure can be obtained at 500 degrees C for 2 h in static air. Field emission scanning electron, atomic force and piezoelectric force microscopies showed the microstructure, thickness and domains with polarization-oriented vectors of BNFO thin films. Ferroelectric and magnetoelectric properties are evident by hysteresis loops. The magnetoelectric coefficient measurement was performed to show the magnetoelectric coupling behavior. The maximum magnetoelectric coefficient in the longitudinal direction was close to 12 V/cm Oe. Piezoresponse force microscopy micrographs reveal a polarization reversal with 71 degrees and 180 degrees domain switchings and one striped-domain pattern oriented at 45 degrees besides the presence of some nanodomains with rhombohedral phase involved in a matrix with tetragonal structure. The cluster models illustrated the unipolar strain behavior of BNFO thin films. The leakage current density at 5.0V is equal to 1.5 x 10(-10) A/cm(2) and the dominant mechanism in the low-leakage current for BNFO thin films was space-charge-limited conduction. (C) 2011 Elsevier B.V. All rights reserved.en
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
dc.format.extent5326-5335-
dc.language.isoeng-
dc.publisherElsevier B.V. Sa-
dc.sourceWeb of Science-
dc.subjectFerroelectricsen
dc.subjectChemical synthesisen
dc.subjectPiezoelectricityen
dc.subjectMagnetic measurementsen
dc.titleStructure, ferroelectric/magnetoelectric properties and leakage current density of (Bi0.85Nd0.15)FeO3 thin filmsen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionUniversidade Federal de Itajubá (UNIFEI)-
dc.description.affiliationUniv Estadual Paulista, BR-14801907 Araraquara, SP, Brazil-
dc.description.affiliationUniv Estadual Paulista, Fac Engn Guaratingueta, BR-12516410 São Paulo, Brazil-
dc.description.affiliationUNIFEI Universidade Federal de Itajubá (UNIFEI), BR-3590037 Itabira, MG, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, BR-14801907 Araraquara, SP, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, Fac Engn Guaratingueta, BR-12516410 São Paulo, Brazil-
dc.description.sponsorshipIdFAPESP: 09/50303-4-
dc.identifier.doi10.1016/j.jallcom.2011.02.030-
dc.identifier.wosWOS:000289373000027-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofJournal of Alloys and Compounds-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

There are no files associated with this item.
 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.