You are in the accessibility menu

Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/42399
Full metadata record
DC FieldValueLanguage
dc.contributor.authorSimões, Alexandre Zirpoli-
dc.contributor.authorAguiar, E. C.-
dc.contributor.authorGonzalez, A. H. M.-
dc.contributor.authorAndres, J.-
dc.contributor.authorLongo, Elson-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-20T15:34:02Z-
dc.date.accessioned2016-10-25T18:10:39Z-
dc.date.available2014-05-20T15:34:02Z-
dc.date.available2016-10-25T18:10:39Z-
dc.date.issued2008-11-15-
dc.identifierhttp://dx.doi.org/10.1063/1.3029658-
dc.identifier.citationJournal of Applied Physics. Melville: Amer Inst Physics, v. 104, n. 10, p. 6, 2008.-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/11449/42399-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/42399-
dc.description.abstractPure and lanthanum modified BFO (LaxBi1-xFeO3, x=0.0, 0.08, 0.15, 0.30) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the soft chemical method. The effect of La substitution on the structural and electrical properties was studied. Scanning electron microscopy, x-ray diffraction, and Raman spectroscopy have been employed to characterize the thin films while the piezoelectric measurements were carried out using a setup based on an atomic force microscope. It was found that La-doped BFO thin films exhibited good ferroelectric properties, such as improved leakage current density and retention-free characteristics. The unipolar strain is strongly reduced by the amount of lanthanum added to the system.en
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
dc.format.extent6-
dc.language.isoeng-
dc.publisherAmerican Institute of Physics (AIP)-
dc.sourceWeb of Science-
dc.subjectannealingen
dc.subjectantiferromagnetic materialsen
dc.subjectatomic force microscopyen
dc.subjectbismuth compoundsen
dc.subjectdielectric polarisationen
dc.subjectferroelectric switchingen
dc.subjectferroelectric thin filmsen
dc.subjectlanthanum compoundsen
dc.subjectleakage currentsen
dc.subjectmultiferroicsen
dc.subjectpiezoelectricityen
dc.subjectplatinumen
dc.subjectRaman spectraen
dc.subjectscanning electron microscopyen
dc.subjectsiliconen
dc.subjectsilicon compoundsen
dc.subjecttitaniumen
dc.subjectX-ray diffractionen
dc.titleStrain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical methoden
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionUniv Jaume 1-
dc.description.affiliationUniv Estadual Paulista, CEP, LIEC, Dept Fisicoquim,Inst Quim, BR-14800900 São Paulo, Brazil-
dc.description.affiliationUniv Jaume 1, Dept Quim Fis & Analit, Castellon de La Plana 12071, Spain-
dc.description.affiliationUnespUniv Estadual Paulista, CEP, LIEC, Dept Fisicoquim,Inst Quim, BR-14800900 São Paulo, Brazil-
dc.identifier.doi10.1063/1.3029658-
dc.identifier.wosWOS:000262605800118-
dc.rights.accessRightsAcesso aberto-
dc.identifier.fileWOS000262605800118.pdf-
dc.relation.ispartofJournal of Applied Physics-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

There are no files associated with this item.
Show simple item record Show full item record   View Statistics
 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.