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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/64194
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dc.contributor.authorLeite, E. R.-
dc.contributor.authorVarela, José Arana-
dc.contributor.authorLongo, Elson-
dc.date.accessioned2014-05-27T11:17:27Z-
dc.date.accessioned2016-10-25T18:12:50Z-
dc.date.available2014-05-27T11:17:27Z-
dc.date.available2016-10-25T18:12:50Z-
dc.date.issued1992-01-01-
dc.identifierhttp://dx.doi.org/10.1007/BF00553413-
dc.identifier.citationJournal of Materials Science, v. 27, n. 19, p. 5325-5329, 1992.-
dc.identifier.issn0022-2461-
dc.identifier.issn1573-4803-
dc.identifier.urihttp://hdl.handle.net/11449/64194-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/64194-
dc.description.abstractThe electrical degradation phenomena of zinc oxide-based varistors were studied using a high-energy current pulse and a.c. polarization at different temperatures. Activation energy measurements during the degradation process showed that these phenomena are associated with diffusion and that the diffusion-controlling species are slower than Zn., For degradation promoted by current pulses of 8×20 μs, the Schottky potential barrier deformation was measured. A decrease in height and width of the potential barrier due to the reduction of surface states density, N s, without a significant change in donor density, N d, was observed. To explain these results, a modification of the unstable components model is proposed for the potential barrier in which the degradation is due to oxi-reduction reactions between atomic defects. These reactions promote the elimination of zinc vacancies and/or adsorbed oxygen on the grain boundaries. © 1992 Chapman & Hall.en
dc.format.extent5325-5329-
dc.language.isoeng-
dc.sourceScopus-
dc.titleA new interpretation for the degradation phenomenon of ZnO varistorsen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)-
dc.description.affiliationDepartamento Prod. Elétricos, 3M do Brasil, Via Anhanguera, Km 110, Campinas, SP-
dc.description.affiliationInstituto de Química UNESP, CP 355, Araraquara, SP, 14800-
dc.description.affiliationDepartamento de Química UFSCar, CP 676, São Carlos, SP, 13560-
dc.description.affiliationUnespInstituto de Química UNESP, CP 355, Araraquara, SP, 14800-
dc.identifier.doi10.1007/BF00553413-
dc.identifier.wosWOS:A1992JR57200033-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofJournal of Materials Science-
dc.identifier.scopus2-s2.0-0004800906-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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