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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/64674
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dc.contributor.authordo Prado, A. J.-
dc.contributor.authorAstorga, O. A M-
dc.date.accessioned2014-05-27T11:18:02Z-
dc.date.accessioned2016-10-25T18:13:39Z-
dc.date.available2014-05-27T11:18:02Z-
dc.date.available2016-10-25T18:13:39Z-
dc.date.issued1995-12-01-
dc.identifierhttp://dx.doi.org/10.1109/ICSD.1995.523038-
dc.identifier.citationIEEE International Conference on Conduction & Breakdown in Solid Dielectrics, p. 508-512.-
dc.identifier.urihttp://hdl.handle.net/11449/64674-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/64674-
dc.description.abstractAn experimental model and a mathematical model with the introduction of a ramp in the channel of Obenaus model are presented. The aim is to present a better reproduction of the real layer pollution deposited on the HV insulators. This better reproduction is obtained from two types of thickness variation: the introduction of a ramp (soft variation) and the introduction of a step (sudden variation). The computational simulations and the experimental data suggest that the introduction of the ramp is the better reproduction of the layer pollution. The ramp approximates to the real layer pollution more than the step.en
dc.format.extent508-512-
dc.language.isoeng-
dc.sourceScopus-
dc.subjectAlgorithms-
dc.subjectApproximation theory-
dc.subjectComputational methods-
dc.subjectComputer simulation-
dc.subjectElectric discharges-
dc.subjectElectric resistance-
dc.subjectFlashover-
dc.subjectGeometry-
dc.subjectMathematical models-
dc.subjectPollution-
dc.subjectHigh voltage polluted insulators-
dc.subjectObenaus model-
dc.subjectVoltage polarity-
dc.subjectElectric insulating materials-
dc.titleModelling of the influence of the layer pollution thickness in high voltage polluted insulatorsen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationFEIS/UNESP, Sao Paulo-
dc.description.affiliationUnespFEIS/UNESP, Sao Paulo-
dc.identifier.doi10.1109/ICSD.1995.523038-
dc.identifier.wosWOS:A1995BD97L00099-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofIEEE International Conference on Conduction & Breakdown in Solid Dielectrics-
dc.identifier.scopus2-s2.0-0029483857-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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