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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/65256
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dc.contributor.authorSouza, A. E. de-
dc.contributor.authorMonteiro, S. H.-
dc.contributor.authorSantilli, Celso Valentim-
dc.contributor.authorPulcinelli, Sandra Helena-
dc.date.accessioned2014-05-27T11:18:17Z-
dc.date.accessioned2016-10-25T18:14:44Z-
dc.date.available2014-05-27T11:18:17Z-
dc.date.available2016-10-25T18:14:44Z-
dc.date.issued1997-12-01-
dc.identifierhttp://dx.doi.org/10.1023/A:1018574903725-
dc.identifier.citationJournal of Materials Science: Materials in Electronics, v. 8, n. 4, p. 265-270, 1997.-
dc.identifier.issn0957-4522-
dc.identifier.urihttp://hdl.handle.net/11449/65256-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/65256-
dc.description.abstractStarting from aqueous colloidal suspensions, undoped and Nb5+ doped SnO2 thin films have been prepared by using the dip-coating sol gel process. X-ray diffraction results show that films are polycrystalline with crystallites of average size1-4nm. Decreasing the thickness of the films and increasing the Nb5+ concentration limits the crystallite size growth during firing. Complex impedance measurements reveal capacitive and resistive effects between adjacent crystallites or grains, characteristic of electrical potential barriers. The transfer of charge throughout these barriers determines the macroscopic electrical resistance of the layer. The analysis of the optical absorption spectra shows that the samples present more than 80% of their transmittance in the visible region and the value of the band gap energy increases with decreasing crystallite size. © 1997 Chapman & Hall.en
dc.format.extent265-270-
dc.language.isoeng-
dc.sourceScopus-
dc.subjectCoating techniques-
dc.subjectCrystal growth-
dc.subjectCrystal structure-
dc.subjectElectric impedance measurement-
dc.subjectElectric properties-
dc.subjectElectric resistance-
dc.subjectEnergy gap-
dc.subjectFilm preparation-
dc.subjectOptical properties-
dc.subjectSemiconducting films-
dc.subjectSol-gels-
dc.subjectX ray diffraction analysis-
dc.subjectAqueous colloidal suspensions-
dc.subjectBand gap energy-
dc.subjectComplex impedance measurements-
dc.subjectDip coating-
dc.subjectTin dioxide-
dc.subjectSemiconducting tin compounds-
dc.titleElectrical and optical characteristics of SnO2 thin films prepared by dip coating from aqueous colloidal suspensionsen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationInstituto de Química UNESP, PO Box 355, Araraquara, 14800-900, SP-
dc.description.affiliationUnespInstituto de Química UNESP, PO Box 355, Araraquara, 14800-900, SP-
dc.identifier.doi10.1023/A:1018574903725-
dc.identifier.wosWOS:A1997XP07600008-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofJournal of Materials Science: Materials in Electronics-
dc.identifier.scopus2-s2.0-0031206909-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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