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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/65521
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dc.contributor.authorZanetti, S. M.-
dc.contributor.authorLeite, E. R.-
dc.contributor.authorLongo, Elson-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-27T11:19:37Z-
dc.date.accessioned2016-10-25T18:15:15Z-
dc.date.available2014-05-27T11:19:37Z-
dc.date.available2016-10-25T18:15:15Z-
dc.date.issued1998-10-01-
dc.identifierhttp://dx.doi.org/10.1557/JMR.1998.0400-
dc.identifier.citationJournal of Materials Research, v. 13, n. 10, p. 2932-2935, 1998.-
dc.identifier.issn0884-2914-
dc.identifier.urihttp://hdl.handle.net/11449/65521-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/65521-
dc.description.abstractA polymeric precursor solution was employed in preparing SrBi2Nb2O9 (SBN) powder and thin films dip coated onto Si(100) substrate. XRD results show that the SBN perovskite phase forms at temperatures as low as 600°C through an intermediate fluorite phase. This fluorite phase is observed for samples heat-treated at temperatures of 400 and 500°C. After heat treatment at temperatures ranging from 300 to 800°C, thin films were shown to be crack free. Grazing incident angle XRD characterization shows the occurrence of the fluorite intermediate phase for films also. The thickness of films, measured by MEV, was in the order of 80-100 nm.en
dc.format.extent2932-2935-
dc.language.isoeng-
dc.sourceScopus-
dc.subjectFluorspar-
dc.subjectHeat treatment-
dc.subjectPerovskite-
dc.subjectPhase transitions-
dc.subjectPolymers-
dc.subjectStrontium compounds-
dc.subjectThickness measurement-
dc.subjectThin films-
dc.subjectX ray diffraction analysis-
dc.subjectStrontium bismuth niobate-
dc.subjectDielectric films-
dc.titlePreparation and characterization of SrBi2Nb2O9 thin films made by polymeric precursorsen
dc.typeoutro-
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationDepartamento de Qúimica UFSCar, P.O. Box 676, 13560-905, São Carlos, SP-
dc.description.affiliationInstituto de Química UNESP, P.O. Box 355, 14801-970 Araraquara, SP-
dc.description.affiliationUnespInstituto de Química UNESP, P.O. Box 355, 14801-970 Araraquara, SP-
dc.identifier.doi10.1557/JMR.1998.0400-
dc.identifier.wosWOS:000076362100030-
dc.rights.accessRightsAcesso restrito-
dc.identifier.file2-s2.0-0032187933.pdf-
dc.relation.ispartofJournal of Materials Research-
dc.identifier.scopus2-s2.0-0032187933-
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