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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/65803
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dc.contributor.authorBouquet, V.-
dc.contributor.authorLongo, Elson-
dc.contributor.authorLeite, E. R.-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-27T11:19:45Z-
dc.date.accessioned2016-10-25T18:15:46Z-
dc.date.available2014-05-27T11:19:45Z-
dc.date.available2016-10-25T18:15:46Z-
dc.date.issued1999-07-01-
dc.identifierhttp://dx.doi.org/10.1557/JMR.1999.0418-
dc.identifier.citationJournal of Materials Research, v. 14, n. 7, p. 3115-3121, 1999.-
dc.identifier.issn0884-2914-
dc.identifier.urihttp://hdl.handle.net/11449/65803-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/65803-
dc.description.abstractThe effects of heat-treatment temperature on LiNbO3 thin films prepared by the polymeric precursor method were investigated. The precursor solution was deposited on Si(111) substrates by dip coating. X-ray diffraction and thermal analyses revealed that the crystallization process occurred at a low temperature (420 °C) and led to films with no preferential orientation. High-temperature treatments promoted formation of the LiNb3O8 phase. Scanning electron microscopy, coupled with energy dispersive spectroscopy analyses, showed that the treatment temperature also affected the film microstructure. The surface texture - homogeneous, smooth, and pore-free at low temperature - turned into an `islandlike' microstructure for high-temperature treatments.en
dc.format.extent3115-3121-
dc.language.isoeng-
dc.sourceScopus-
dc.subjectCrystal microstructure-
dc.subjectCrystal orientation-
dc.subjectCrystallization-
dc.subjectFerroelectric materials-
dc.subjectFilm preparation-
dc.subjectHeat treatment-
dc.subjectLithium niobate-
dc.subjectPiezoelectric materials-
dc.subjectSilicon wafers-
dc.subjectSurface structure-
dc.subjectThermal effects-
dc.subjectThin films-
dc.subjectPolymeric precursor method-
dc.subjectDielectric films-
dc.titleInfluence of heat treatment on LiNbO3 thin films prepared on Si(111) by the polymeric precursor methoden
dc.typeoutro-
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationDepartamento de Química LIEC Univ. Federal de Sao Carlos, P.O. Box 676, 13565-905 Sao Carlos, SP-
dc.description.affiliationInstituto de Química Universidade Estadual Paulista, P.O. Box 355, 14884-970, Araraquara, SP-
dc.description.affiliationUnespInstituto de Química Universidade Estadual Paulista, P.O. Box 355, 14884-970, Araraquara, SP-
dc.identifier.doi10.1557/JMR.1999.0418-
dc.identifier.wosWOS:000082550700059-
dc.rights.accessRightsAcesso restrito-
dc.identifier.file2-s2.0-0032662623.pdf-
dc.relation.ispartofJournal of Materials Research-
dc.identifier.scopus2-s2.0-0032662623-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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