Você está no menu de acessibilidade

Utilize este identificador para citar ou criar um link para este item: http://acervodigital.unesp.br/handle/11449/65932
Registro de metadados completo
Campo DCValorIdioma
dc.contributor.authorMessias, Fabio R.-
dc.contributor.authorScalvi, Luis V.A.-
dc.contributor.authorSiu Li, M.-
dc.contributor.authorSantilli, C. V.-
dc.contributor.authorPulcinelli, S. H.-
dc.date.accessioned2014-05-27T11:19:48Z-
dc.date.accessioned2016-10-25T18:15:59Z-
dc.date.available2014-05-27T11:19:48Z-
dc.date.available2016-10-25T18:15:59Z-
dc.date.issued1999-12-01-
dc.identifierhttp://dx.doi.org/10.1080/10420159908226263-
dc.identifier.citationRadiation Effects and Defects in Solids, v. 150, n. 1-4, p. 391-395, 1999.-
dc.identifier.issn1042-0150-
dc.identifier.urihttp://hdl.handle.net/11449/65932-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/65932-
dc.description.abstractSince oxygen vacancies act as donors in SnO2, the electrical properties are related to deviation from stoichiometric composition. Depending on stoichiometry SnO2 can be highly insulating or may exhibit fairly high n-type conductivity. Since bandgap transitions are in the ultraviolet range, its photoconductivity is strongly dependent on the excitation source. We have measured variation of photoconductivity excitation with wavelength for tin dioxide grown by dip-coating sol-gel technique using several light sources: tungsten lamp, xenon, mercury and deuterium, and present selected results. The main band is obtained in the range 3-4eV according to light source spectrum in the ultraviolet range. The presence of oxygen in the cryostat also affects the spectrum since electron-hole pairs react with adsorbed oxygen specimens. © 1999 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.en
dc.format.extent391-395-
dc.language.isoeng-
dc.sourceScopus-
dc.subjectOxygen-
dc.subjectPhotoconductivity-
dc.subjectSol-gel-
dc.subjectTin dioxide-
dc.subjectVacancy-
dc.subjectCoating techniques-
dc.subjectComposition-
dc.subjectElectric properties-
dc.subjectElectron transitions-
dc.subjectMetal vapor lamps-
dc.subjectOxides-
dc.subjectSol-gels-
dc.subjectThin films-
dc.subjectTin compounds-
dc.subjectDip coating sol-gel technique-
dc.subjectOxygen vacancies-
dc.subjectPhotoconductivity dependence-
dc.subjectCrystal defects-
dc.titleOxygen related defects excitation and photoconductivity dependence of SnO2 sol-gel films with several light sourcesen
dc.typeoutro-
dc.contributor.institutionUniversidade de São Paulo (USP)-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationInstituto de Física de São Carlos USP, C.P. 369, 13560-970 São Carlos SP-
dc.description.affiliationDepartamento de Física, FC UNESP, C.P. 473, 17033-360 Bauru SP-
dc.description.affiliationInstituto de Química UNESP, C.P. 355, 14801-907 Araraquara SP-
dc.description.affiliationUnespDepartamento de Física, FC UNESP, C.P. 473, 17033-360 Bauru SP-
dc.description.affiliationUnespInstituto de Química UNESP, C.P. 355, 14801-907 Araraquara SP-
dc.identifier.doi10.1080/10420159908226263-
dc.identifier.wosWOS:000088130800065-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofRadiation Effects and Defects in Solids-
dc.identifier.scopus2-s2.0-0033346759-
Aparece nas coleções:Artigos, TCCs, Teses e Dissertações da Unesp

Não há nenhum arquivo associado com este item.
 

Itens do Acervo digital da UNESP são protegidos por direitos autorais reservados a menos que seja expresso o contrário.