You are in the accessibility menu

Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/66209
Full metadata record
DC FieldValueLanguage
dc.contributor.authorTokumoto, M. S.-
dc.contributor.authorSmith, A.-
dc.contributor.authorSantilli, Celso Valentim-
dc.contributor.authorPulcinelli, Sandra Helena-
dc.contributor.authorElkaim, E.-
dc.contributor.authorBriois, V.-
dc.date.accessioned2014-05-27T11:19:56Z-
dc.date.accessioned2016-10-25T18:16:29Z-
dc.date.available2014-05-27T11:19:56Z-
dc.date.available2016-10-25T18:16:29Z-
dc.date.issued2000-08-01-
dc.identifierhttp://dx.doi.org/10.1016/S0022-3093(00)00176-9-
dc.identifier.citationJournal of Non-Crystalline Solids, v. 273, n. 1-3, p. 302-306, 2000.-
dc.identifier.issn0022-3093-
dc.identifier.urihttp://hdl.handle.net/11449/66209-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/66209-
dc.description.abstractUndoped and indium-doped Zinc oxide (ZnO) solid films were deposited by the pyrosol process at 450°C on glass substrates from solutions where In/Zn ratio was 2, 5, and 10 at.%. Electrical measurements performed at room temperature show that the addition of indium changes the resistance of the films. The resistivities of doped films are less than non-doped ZnO films by one to two orders of magnitude depending on the dopant concentration in the solution. Preferential orientation of the films with the c-axis perpendicular to the substrate was detected by X-ray diffraction and polarized extended X-ray absorption fine structures measurements at the Zn K edge. This orientation depends on the indium concentration in the starting solution. The most textured films were obtained for solutions where In/Zn ratio was 2 and 5 at.%. When In/Zn = 10 at.%, the films had a nearly random orientation of crystallites. Evidence of the incorporation of indium in the ZnO lattice was obtained from extended X-ray absorption fine structures at the In and Zn K edges. The structural analysis of the least resistive film (Zn/In = 5 at.%) shows that In substitutes Zn in the wurtzite structure. © 2000 Elsevier Science B.V. All rights reserved.en
dc.format.extent302-306-
dc.language.isoeng-
dc.sourceScopus-
dc.titleEffect of in concentration in the starting solution on the structural and electrical properties of ZnO films prepared by the pyrosol process at 450°Cen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionENSCI-
dc.contributor.institutionBât 209 D-
dc.description.affiliationInstituto de Quimica UNESP, P.O. Box 355, 14 801-970 Araraquara-SP-
dc.description.affiliationGEMH ENSCI, 47, av. A. Thomas, 87 065 Limoges Cedex-
dc.description.affiliationLURE UPS Bât 209 D, BP 34, 91 898 Orsay Cedex-
dc.description.affiliationUnespInstituto de Quimica UNESP, P.O. Box 355, 14 801-970 Araraquara-SP-
dc.identifier.doi10.1016/S0022-3093(00)00176-9-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofJournal of Non-Crystalline Solids-
dc.identifier.scopus2-s2.0-0000408652-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

There are no files associated with this item.
 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.