You are in the accessibility menu

Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/66587
Full metadata record
DC FieldValueLanguage
dc.contributor.authorZanetti, S. M.-
dc.contributor.authorDuclere, J. R.-
dc.contributor.authorGuilloux-Viry, M.-
dc.contributor.authorBouquet, V.-
dc.contributor.authorLeite, E. R.-
dc.contributor.authorLongo, Elson-
dc.contributor.authorVarela, José Arana-
dc.contributor.authorPerrin, A.-
dc.date.accessioned2014-05-27T11:20:18Z-
dc.date.accessioned2016-10-25T18:17:11Z-
dc.date.available2014-05-27T11:20:18Z-
dc.date.available2016-10-25T18:17:11Z-
dc.date.issued2001-10-01-
dc.identifierhttp://dx.doi.org/10.1016/S0955-2219(00)00304-6-
dc.identifier.citationJournal of the European Ceramic Society, v. 21, n. 12, p. 2199-2205, 2001.-
dc.identifier.issn0955-2219-
dc.identifier.urihttp://hdl.handle.net/11449/66587-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/66587-
dc.description.abstractFerroelectric SrBi2Nb2O9 (SBN) thin films were prepared by pulsed laser deposition (PLD) on Pt/Ti/SiO2/Si(100) using a sequential deposition process from two SBN and Bi2O3 targets. This route allows for bismuth enrichment of the film composition in order to improve the ferroelectric characteristics. Structural and microstructural characterizations were performed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The composition of films and targets was determined by energy dispersive X-ray spectrometry (EDX). The deposition temperature, which provided well-crystallized layered perovskite SBN phase films in situ, was found to be 700°C. The results were compared with those obtained for SBN films deposited at 400°C and then crystallized ex situ. For an ex situ annealing temperature of 750°C, a remanent polarization value (Pr) of 23.2 μc/cm2 and a coercive field (Ec) of 112 kV/cm were measured. © 2001 Elsevier Science Ltd. All rights reserved.en
dc.format.extent2199-2205-
dc.language.isoeng-
dc.sourceScopus-
dc.subjectFerroelectric properties-
dc.subjectFilms-
dc.subjectPLD-
dc.subjectPulsed laser deposition-
dc.subjectSrBi2Nb2O9-
dc.subjectDeposition-
dc.subjectFerroelectric ceramics-
dc.subjectPerovskite-
dc.subjectScanning electron microscopy-
dc.subjectX ray diffraction analysis-
dc.subjectX ray spectroscopy-
dc.subjectPolarization value (Pr)-
dc.subjectThin films-
dc.subjectfilm-
dc.titleFerroelectric SBN thin films grown by an SBN/Bi2O3 PLD sequential processen
dc.typeoutro-
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)-
dc.contributor.institutionUMR 6511 CNRS/Université de Rennes 1-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationDepartamento de Química Universidade Federal de São Carlos UFSCar, PO Box 676, 13560-905 São Carlos, SP-
dc.description.affiliationLaboratoire de Chimie du Solide et Inorganique Moléculaire UMR 6511 CNRS/Université de Rennes 1 Campus de Beaulieu, 35042 Rennes Cedex-
dc.description.affiliationInstituto de Química Universidade Estadual de São Paulo UNESP, PO Box 355, 14801-970 Araraquara, SP-
dc.description.affiliationUnespInstituto de Química Universidade Estadual de São Paulo UNESP, PO Box 355, 14801-970 Araraquara, SP-
dc.identifier.doi10.1016/S0955-2219(00)00304-6-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofJournal of the European Ceramic Society-
dc.identifier.scopus2-s2.0-0035479512-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

There are no files associated with this item.
Show simple item record Show full item record   View Statistics
 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.