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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/66761
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dc.contributor.authorSimões, A. Z.-
dc.contributor.authorGonzalez, A. H.-
dc.contributor.authorZaghete, M. A.-
dc.contributor.authorStojanovic, B. D.-
dc.contributor.authorCavalheiro, A. A.-
dc.contributor.authorMoeckli, P.-
dc.contributor.authorSetter, N.-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-27T11:20:23Z-
dc.date.accessioned2016-10-25T18:17:31Z-
dc.date.available2014-05-27T11:20:23Z-
dc.date.available2016-10-25T18:17:31Z-
dc.date.issued2002-01-01-
dc.identifierhttp://dx.doi.org/10.1080/00150190211491-
dc.identifier.citationFerroelectrics, v. 271, p. 33-38.-
dc.identifier.issn0015-0193-
dc.identifier.issn1563-5112-
dc.identifier.urihttp://hdl.handle.net/11449/66761-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/66761-
dc.description.abstractPolymeric precursor solution (Pechini method) was used to deposit LiNbO 3 thin films by spin-coating on (100) silicon substrates. X-ray diffraction data of thin films showed that the increase of oxygen flow promotes a preferred orientation of (001) LiNbO 3 planes parallel to the substrate surface. Surface roughness and grain size, observed by atomic force microscopy, change also with oxygen flow. © 2002 Taylor & Francis.en
dc.format.extent33-38-
dc.language.isoeng-
dc.sourceScopus-
dc.subjectCrystallization-
dc.subjectLiNbO 3-
dc.subjectRietveld analysis-
dc.subjectLiNbO3-
dc.subjectOxygen flow-
dc.subjectSubstrate surface-
dc.subjectAtomic force microscopy-
dc.subjectCrystalline materials-
dc.subjectFlow of fluids-
dc.subjectLithium niobate-
dc.subjectMorphology-
dc.subjectOxygen-
dc.subjectSilicon-
dc.subjectSpin coating-
dc.subjectThin films-
dc.titleInfluence of oxygen flow on crystallization and morphology of LiNbO 3 thin filmsen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionSwiss Federal Institute of Technology-
dc.description.affiliationChemistry Institute Department of Chemistry-Physics Unesp, C.P. 355, CEP 14801-970 Araraquara-SP-
dc.description.affiliationSwiss Federal Institute of Technology, CH - 1015 Lausanne-
dc.description.affiliationUnespChemistry Institute Department of Chemistry-Physics Unesp, C.P. 355, CEP 14801-970 Araraquara-SP-
dc.identifier.doi10.1080/00150190211491-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofFerroelectrics-
dc.identifier.scopus2-s2.0-0141943464-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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