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http://acervodigital.unesp.br/handle/11449/67477
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DC Field | Value | Language |
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dc.contributor.author | Gonçalves, Rogéria R. | - |
dc.contributor.author | Carturan, Giovanni | - |
dc.contributor.author | Zampedri, Luca | - |
dc.contributor.author | Ferrari, Maurizio | - |
dc.contributor.author | Armellini, Cristina | - |
dc.contributor.author | Chiasera, Alessandro | - |
dc.contributor.author | Mattarelli, M. | - |
dc.contributor.author | Moser, Enrico | - |
dc.contributor.author | Montagna, Maurizio | - |
dc.contributor.author | Righini, Giancarlo C. | - |
dc.contributor.author | Pelli, Stefano | - |
dc.contributor.author | Nunzi Conti, Gualtiero | - |
dc.contributor.author | Ribeiro, Sidney J.L. | - |
dc.contributor.author | Messaddeq, Younes | - |
dc.contributor.author | Minotti, Antonio | - |
dc.contributor.author | Foglietti, Vittorio | - |
dc.contributor.author | Portales, Hervè | - |
dc.date.accessioned | 2014-05-27T11:20:56Z | - |
dc.date.accessioned | 2016-10-25T18:19:01Z | - |
dc.date.available | 2014-05-27T11:20:56Z | - |
dc.date.available | 2016-10-25T18:19:01Z | - |
dc.date.issued | 2003-11-27 | - |
dc.identifier | http://dx.doi.org/10.1117/12.478340 | - |
dc.identifier.citation | Proceedings of SPIE - The International Society for Optical Engineering, v. 4990, p. 111-120. | - |
dc.identifier.issn | 0277-786X | - |
dc.identifier.uri | http://hdl.handle.net/11449/67477 | - |
dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/67477 | - |
dc.description.abstract | Erbium activated SiO2 -HfO2 planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-gel method. The films were deposited on v-SiO2 and silica-on-silicon substrates using dip-coating technique. The waveguides show high densification degree, effective intermingling of the two film components, and uniform surface morphology. The waveguide deposited on silica-on-silicon substrates shows one single propagation mode at 1.5μm, with a confinement coefficient of 0.81 and an attenuation coefficient of 0.8 dB/cm at 632.8nm. Emission in the C-telecommunication band was observed at room temperature for all the samples upon continuouswave excitation at 980 nm or 514.5 nm. The shape of the emission band corresponding to the 4I13/2 → 4I15/2 transition is found to be almost independent both on erbium content and excitation wavelength, with a FWHM between 44 and 48 nm. The 4I13/2 level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1 - 6.6 ms, depending on the erbium concentration. Infrared to visible upconversion luminescence upon continuous-wave excitation at 980 nm was observed for all the samples. Channel waveguide in rib configuration was obtained by etching the active film in order to have a well confined mode at 1.5 μm. | en |
dc.format.extent | 111-120 | - |
dc.language.iso | eng | - |
dc.source | Scopus | - |
dc.subject | Channel waveguides | - |
dc.subject | Erbium | - |
dc.subject | Luminescence | - |
dc.subject | Silica-hafnia | - |
dc.subject | Sol-gel planar waveguides | - |
dc.subject | Deposition | - |
dc.subject | Etching | - |
dc.subject | Morphology | - |
dc.subject | Semiconductor doping | - |
dc.subject | Silicon wafers | - |
dc.subject | Sol-gels | - |
dc.subject | Substrates | - |
dc.subject | Wavelength division multiplexing | - |
dc.subject | Planar waveguides | - |
dc.subject | Optical waveguides | - |
dc.title | Sol-Gel Erbium-Doped Silica-Hafnia Planar and Channel Waveguides | en |
dc.type | outro | - |
dc.contributor.institution | Università di Trento | - |
dc.contributor.institution | Ist. di Fotonica e Nanotecnologie | - |
dc.contributor.institution | Ist. di Fis. Applicata Nello Carrara | - |
dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
dc.contributor.institution | MEMS Group | - |
dc.contributor.institution | Università di Padova | - |
dc.description.affiliation | Dipto. di Ingegneria dei Materiali Università di Trento, Via Mesiano 77, 1-38050 Trento | - |
dc.description.affiliation | CNR-IFN Ist. di Fotonica e Nanotecnologie, via Sommarive 14, 1-38050 Povo, Trento | - |
dc.description.affiliation | Dipartimento di Fisica INFM Università di Trento, via Sommarive 14, 1-38050 Povo, Trento | - |
dc.description.affiliation | CNR-IFAC Ist. di Fis. Applicata Nello Carrara, via Panciatichi 64, 1-50127 Firenze | - |
dc.description.affiliation | Institute of Chemistry UNESP, P.O.Box 355, 14801-970 Araraquara, SP | - |
dc.description.affiliation | CNR Ist. di Fotonica e Nanotecnologie MEMS Group, Via Cineto Romano 42, I-00156 Roma | - |
dc.description.affiliation | Dipartimento di Fisica INFM Università di Padova, via Marzolo 8, 1-35131 Padova | - |
dc.description.affiliationUnesp | Institute of Chemistry UNESP, P.O.Box 355, 14801-970 Araraquara, SP | - |
dc.identifier.doi | 10.1117/12.478340 | - |
dc.rights.accessRights | Acesso restrito | - |
dc.relation.ispartof | Proceedings of SPIE - The International Society for Optical Engineering | - |
dc.identifier.scopus | 2-s2.0-0242693284 | - |
Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp |
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