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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/67477
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dc.contributor.authorGonçalves, Rogéria R.-
dc.contributor.authorCarturan, Giovanni-
dc.contributor.authorZampedri, Luca-
dc.contributor.authorFerrari, Maurizio-
dc.contributor.authorArmellini, Cristina-
dc.contributor.authorChiasera, Alessandro-
dc.contributor.authorMattarelli, M.-
dc.contributor.authorMoser, Enrico-
dc.contributor.authorMontagna, Maurizio-
dc.contributor.authorRighini, Giancarlo C.-
dc.contributor.authorPelli, Stefano-
dc.contributor.authorNunzi Conti, Gualtiero-
dc.contributor.authorRibeiro, Sidney J.L.-
dc.contributor.authorMessaddeq, Younes-
dc.contributor.authorMinotti, Antonio-
dc.contributor.authorFoglietti, Vittorio-
dc.contributor.authorPortales, Hervè-
dc.date.accessioned2014-05-27T11:20:56Z-
dc.date.accessioned2016-10-25T18:19:01Z-
dc.date.available2014-05-27T11:20:56Z-
dc.date.available2016-10-25T18:19:01Z-
dc.date.issued2003-11-27-
dc.identifierhttp://dx.doi.org/10.1117/12.478340-
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineering, v. 4990, p. 111-120.-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/11449/67477-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/67477-
dc.description.abstractErbium activated SiO2 -HfO2 planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-gel method. The films were deposited on v-SiO2 and silica-on-silicon substrates using dip-coating technique. The waveguides show high densification degree, effective intermingling of the two film components, and uniform surface morphology. The waveguide deposited on silica-on-silicon substrates shows one single propagation mode at 1.5μm, with a confinement coefficient of 0.81 and an attenuation coefficient of 0.8 dB/cm at 632.8nm. Emission in the C-telecommunication band was observed at room temperature for all the samples upon continuouswave excitation at 980 nm or 514.5 nm. The shape of the emission band corresponding to the 4I13/2 → 4I15/2 transition is found to be almost independent both on erbium content and excitation wavelength, with a FWHM between 44 and 48 nm. The 4I13/2 level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1 - 6.6 ms, depending on the erbium concentration. Infrared to visible upconversion luminescence upon continuous-wave excitation at 980 nm was observed for all the samples. Channel waveguide in rib configuration was obtained by etching the active film in order to have a well confined mode at 1.5 μm.en
dc.format.extent111-120-
dc.language.isoeng-
dc.sourceScopus-
dc.subjectChannel waveguides-
dc.subjectErbium-
dc.subjectLuminescence-
dc.subjectSilica-hafnia-
dc.subjectSol-gel planar waveguides-
dc.subjectDeposition-
dc.subjectEtching-
dc.subjectMorphology-
dc.subjectSemiconductor doping-
dc.subjectSilicon wafers-
dc.subjectSol-gels-
dc.subjectSubstrates-
dc.subjectWavelength division multiplexing-
dc.subjectPlanar waveguides-
dc.subjectOptical waveguides-
dc.titleSol-Gel Erbium-Doped Silica-Hafnia Planar and Channel Waveguidesen
dc.typeoutro-
dc.contributor.institutionUniversità di Trento-
dc.contributor.institutionIst. di Fotonica e Nanotecnologie-
dc.contributor.institutionIst. di Fis. Applicata Nello Carrara-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionMEMS Group-
dc.contributor.institutionUniversità di Padova-
dc.description.affiliationDipto. di Ingegneria dei Materiali Università di Trento, Via Mesiano 77, 1-38050 Trento-
dc.description.affiliationCNR-IFN Ist. di Fotonica e Nanotecnologie, via Sommarive 14, 1-38050 Povo, Trento-
dc.description.affiliationDipartimento di Fisica INFM Università di Trento, via Sommarive 14, 1-38050 Povo, Trento-
dc.description.affiliationCNR-IFAC Ist. di Fis. Applicata Nello Carrara, via Panciatichi 64, 1-50127 Firenze-
dc.description.affiliationInstitute of Chemistry UNESP, P.O.Box 355, 14801-970 Araraquara, SP-
dc.description.affiliationCNR Ist. di Fotonica e Nanotecnologie MEMS Group, Via Cineto Romano 42, I-00156 Roma-
dc.description.affiliationDipartimento di Fisica INFM Università di Padova, via Marzolo 8, 1-35131 Padova-
dc.description.affiliationUnespInstitute of Chemistry UNESP, P.O.Box 355, 14801-970 Araraquara, SP-
dc.identifier.doi10.1117/12.478340-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineering-
dc.identifier.scopus2-s2.0-0242693284-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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