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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/67737
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dc.contributor.authorFoschini, C. R.-
dc.contributor.authorLi, J. F.-
dc.contributor.authorSuchicital, C. T A-
dc.contributor.authorViehland, D.-
dc.contributor.authorStojanovic, B. D.-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-27T11:21:05Z-
dc.date.accessioned2016-10-25T18:19:35Z-
dc.date.available2014-05-27T11:21:05Z-
dc.date.available2016-10-25T18:19:35Z-
dc.date.issued2004-05-10-
dc.identifier.citationCeramic Transactions, v. 150, p. 245-251.-
dc.identifier.urihttp://hdl.handle.net/11449/67737-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/67737-
dc.description.abstractLead zirconate titanate (PZT) solutions were prepared using a polymeric precursor method, Zr n-propoxide and Ti i-propoxide were used as starting materials with ethylene glycol and water as solvents. The PZT solution was spin-coated on Pt/Ti/SiO2/Si substrates, baked on a hot plate, and finally heat-treated in a tube furnace between 400 and 800°C. The surface morphology and grain size of the films were characterized by atomic force microscopy (AFM), using a tapping mode with amplitude modulation. The films, thermal annealed at temperatures higher than 500°C, exhibited a dense microstructure, without noticeable cracks or voids. Electrical properties were investigated as a function of composition and annealing temperature.en
dc.format.extent245-251-
dc.language.isoeng-
dc.sourceScopus-
dc.subjectAmplitude modulation-
dc.subjectAnnealing-
dc.subjectAtomic force microscopy-
dc.subjectCharacterization-
dc.subjectComposition-
dc.subjectFerroelectricity-
dc.subjectLead compounds-
dc.subjectMicrostructure-
dc.subjectOrganic solvents-
dc.subjectPolyethylene glycols-
dc.subjectSilica-
dc.subjectStoichiometry-
dc.subjectAnnealing temperatures-
dc.subjectDense microstructures-
dc.subjectElectromechanical response-
dc.subjectThin films-
dc.titleTemperature and stoichiometry effect on microstructural and ferroelectric properties of Pb(Zr1-xTix)O3 thin films prepared by chemical soulution depositionen
dc.typeoutro-
dc.contributor.institutionVirginia Polytechnic Institute and State University-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationVirginia Polytech. Inst./Stt. Univ. 213 Holden Hall, Blacksburg, VA 24061-
dc.description.affiliationInstitute of Chemistry UNESP, C.P. 355, Araraquara, SP, 14801-970-
dc.description.affiliationUnespInstitute of Chemistry UNESP, C.P. 355, Araraquara, SP, 14801-970-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofCeramic Transactions-
dc.identifier.scopus2-s2.0-2142816540-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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