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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/67803
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dc.contributor.authorStojanovic, B. D.-
dc.contributor.authorSimões, A. Z.-
dc.contributor.authorZaghete, M. A.-
dc.contributor.authorSetter, N.-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-27T11:21:07Z-
dc.date.accessioned2016-10-25T18:19:44Z-
dc.date.available2014-05-27T11:21:07Z-
dc.date.available2016-10-25T18:19:44Z-
dc.date.issued2004-07-27-
dc.identifierhttp://dx.doi.org/10.1109/ICMEL.2004.1314875-
dc.identifier.citationProceedings of the International Conference on Microelectronics, v. 24 II, p. 511-514.-
dc.identifier.urihttp://hdl.handle.net/11449/67803-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/67803-
dc.description.abstractThin films of lithium niobate were deposited on the Pt/Ti/SiO2 (111) substrates by the polymeric precursor method (Pechini process). Annealing in static air and oxygen atmosphere was performed at 500°C for 3 hours. The films obtained were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The dielectric constant, dissipation factor and resistance were measured in frequency region from 10 Hz to 10 MHz. Electrical characterizations of the films pointed to ferroelectricity via hysteresis loop. The influence of oxygen atmosphere on crystallization and properties of LiNbO3 thin films is discussed.en
dc.format.extent511-514-
dc.language.isoeng-
dc.sourceScopus-
dc.subjectAnnealing-
dc.subjectChemical vapor deposition-
dc.subjectData reduction-
dc.subjectEpitaxial growth-
dc.subjectFerroelectric materials-
dc.subjectGrain boundaries-
dc.subjectLithium niobate-
dc.subjectMIM devices-
dc.subjectPolarization-
dc.subjectPositive ions-
dc.subjectSol-gels-
dc.subjectStoichiometry-
dc.subjectTransmission electron microscopy-
dc.subjectX ray powder diffraction-
dc.subjectAtmosphere flow-
dc.subjectElectrooptical-
dc.subjectIon distribution-
dc.subjectPechini process-
dc.subjectThin films-
dc.titleInfluence of oxygen atmosphere on LiNbO3 thin films prepared by Pechini processen
dc.typeoutro-
dc.contributor.institutionUniversity of Belgrade-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionSwiss Fed. Institute of Technology-
dc.description.affiliationDepartment of Materials Center for Multidisciplinary Studies University of Belgrade, Kneza Viseslava la, 11000 Beograd-
dc.description.affiliationDepartment of Chemistry Faculty for Chemistry IQ-UNESP, 14800970 Araraquara-
dc.description.affiliationEPFL Swiss Fed. Institute of Technology, Lausanne-
dc.description.affiliationUnespDepartment of Chemistry Faculty for Chemistry IQ-UNESP, 14800970 Araraquara-
dc.identifier.doi10.1109/ICMEL.2004.1314875-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofProceedings of the International Conference on Microelectronics-
dc.identifier.scopus2-s2.0-3142705080-
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