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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/6851
Title: 
Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
Author(s): 
Institution: 
  • Bangor Univ
  • Universidade Estadual Paulista (UNESP)
ISSN: 
0003-6951
Abstract: 
Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90 degrees C, interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from similar to 20x10(10) to 5x10(10) cm(-2) eV(-1) over an energy range extending from 0.05 to 0.25 eV above the bulk Fermi level. (c) 2008 American Institute of Physics.
Issue Date: 
10-Mar-2008
Citation: 
Applied Physics Letters. Melville: Amer Inst Physics, v. 92, n. 10, p. 3, 2008.
Time Duration: 
3
Publisher: 
American Institute of Physics (AIP)
Source: 
http://dx.doi.org/10.1063/1.2897238
URI: 
http://hdl.handle.net/11449/6851
Access Rights: 
Acesso aberto
Type: 
outro
Source:
http://repositorio.unesp.br/handle/11449/6851
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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