You are in the accessibility menu

Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/6851
Full metadata record
DC FieldValueLanguage
dc.contributor.authorAlves, Neri-
dc.contributor.authorTaylor, D. M.-
dc.date.accessioned2014-05-20T13:23:00Z-
dc.date.available2014-05-20T13:23:00Z-
dc.date.issued2008-03-10-
dc.identifierhttp://dx.doi.org/10.1063/1.2897238-
dc.identifier.citationApplied Physics Letters. Melville: Amer Inst Physics, v. 92, n. 10, p. 3, 2008.-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/11449/6851-
dc.description.abstractLow frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90 degrees C, interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from similar to 20x10(10) to 5x10(10) cm(-2) eV(-1) over an energy range extending from 0.05 to 0.25 eV above the bulk Fermi level. (c) 2008 American Institute of Physics.en
dc.format.extent3-
dc.language.isoeng-
dc.publisherAmerican Institute of Physics (AIP)-
dc.sourceWeb of Science-
dc.titleDetermining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)en
dc.typeoutro-
dc.contributor.institutionBangor Univ-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationBangor Univ, Sch Elect Engn, Bangor LL57 1UT, Gwynedd, Wales-
dc.identifier.doi10.1063/1.2897238-
dc.identifier.wosWOS:000253989300140-
dc.rights.accessRightsAcesso aberto-
dc.identifier.fileWOS000253989300140.pdf-
dc.relation.ispartofApplied Physics Letters-
dc.identifier.orcid0000-0001-8001-301Xpt
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

There are no files associated with this item.
 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.