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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/6967
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dc.contributor.authorCazati, T.-
dc.contributor.authorMaciel, A. C.-
dc.contributor.authorEiras, C.-
dc.contributor.authorConstantino, C. J. L.-
dc.contributor.authorda Cunha, H. N.-
dc.contributor.authorBianchi, R. F.-
dc.date.accessioned2014-05-20T13:23:13Z-
dc.date.accessioned2016-10-25T16:44:17Z-
dc.date.available2014-05-20T13:23:13Z-
dc.date.available2016-10-25T16:44:17Z-
dc.date.issued2011-04-27-
dc.identifierhttp://dx.doi.org/10.1088/0022-3727/44/16/165301-
dc.identifier.citationJournal of Physics D-applied Physics. Bristol: Iop Publishing Ltd, v. 44, n. 16, p. 6, 2011.-
dc.identifier.issn0022-3727-
dc.identifier.urihttp://hdl.handle.net/11449/6967-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/6967-
dc.description.abstractThis paper describes a new approach to improve the analysis of surface modification of free-standing semiconducting polymer films emerged from the interfacial interaction between aluminium electrode and HCl-doped polyaniline (PANI) films. The Al-PANI-Al structure was prepared by casting PANI/N-methyl-2-pirrolidone onto a glass substrate and then being sandwiched between Al electrodes after immersion in HCl aqueous solutions and then dried. The Al-polymer interface was investigated by means of complex impedance spectroscopy in the frequency domain on HCl-doped PANI films. The dc conductivity of the interfacial layer between the Al and PANI surface exposed to air during the film processing is higher than those obtained with Al and PANI surface exposed to glass. Raman spectroscopy data confirm this evidence. Here, it is speculated that some dissociated chlorine and aluminium-salt-containing species have contributed as ionic carriers increasing the electrical conductivity of the polymer bulk, and by the formation of an Al(2)O(3) thin layer between the Al and PANI films. An equivalent circuit model considering the influence of Al-PANI reactions on the electrical behaviour of the Al-PANI-Al structure was proposed. Additionally, it was demonstrated that the impedance spectroscopy facilitates the identification of interface modification in the Al-PANI-Al films.en
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de Minas Gerais (FAPEMIG)-
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado do Piauí (FAPEPI)-
dc.format.extent6-
dc.language.isoeng-
dc.publisherIop Publishing Ltd-
dc.sourceWeb of Science-
dc.titleAnalysis of the Al-PANI interfaces by complex impedance spectroscopyen
dc.typeoutro-
dc.contributor.institutionUniversidade Federal de Ouro Preto (UFOP)-
dc.contributor.institutionInst Fis São Carlos-
dc.contributor.institutionUniversidade Federal do Piauí (UFPI)-
dc.contributor.institutionBIOTEC-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationUniv Fed Ouro Preto, Dept Fis, Ouro Preto, MG, Brazil-
dc.description.affiliationInst Fis São Carlos, São Carlos, SP, Brazil-
dc.description.affiliationUniv Fed Piaui, Dept Quim, Teresina, PI, Brazil-
dc.description.affiliationBIOTEC, Nucleo Pesquisa Biodiversidade & Biotecnol, Parnaiba, PI, Brazil-
dc.description.affiliationUNESP, DFQB, Fac Ciencias & Tecnol, Presidente Prudente, SP, Brazil-
dc.description.affiliationUniv Fed Piaui, Dept Fis, Teresina, PI, Brazil-
dc.description.affiliationUnespUNESP, DFQB, Fac Ciencias & Tecnol, Presidente Prudente, SP, Brazil-
dc.identifier.doi10.1088/0022-3727/44/16/165301-
dc.identifier.wosWOS:000289278500009-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofJournal of Physics D: Applied Physics-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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