Please use this identifier to cite or link to this item:
http://acervodigital.unesp.br/handle/11449/70411
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Silva, Vitor D. L. | - |
dc.contributor.author | Pineiz, Tatiane F. | - |
dc.contributor.author | Morais, Evandro A. | - |
dc.contributor.author | Pinheiro, Marco A. L. | - |
dc.contributor.author | Scalvi, Luis Vicente de Andrade | - |
dc.contributor.author | Saeki, Margarida Juri | - |
dc.contributor.author | Rubo, Elisabete Aparecida Andrello | - |
dc.date.accessioned | 2014-05-27T11:23:33Z | - |
dc.date.accessioned | 2016-10-25T18:25:29Z | - |
dc.date.available | 2014-05-27T11:23:33Z | - |
dc.date.available | 2016-10-25T18:25:29Z | - |
dc.date.issued | 2008-05-21 | - |
dc.identifier | http://dx.doi.org/10.1063/1.2926834 | - |
dc.identifier.citation | AIP Conference Proceedings, v. 992, p. 1283-1288. | - |
dc.identifier.issn | 0094-243X | - |
dc.identifier.issn | 1551-7616 | - |
dc.identifier.uri | http://hdl.handle.net/11449/70411 | - |
dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/70411 | - |
dc.description.abstract | Optical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level. © 2008 American Institute of Physics. | en |
dc.format.extent | 1283-1288 | - |
dc.language.iso | eng | - |
dc.source | Scopus | - |
dc.subject | Cerium | - |
dc.subject | Electroluminescent devices | - |
dc.subject | Thin films | - |
dc.subject | Tin dioxide | - |
dc.title | Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films | en |
dc.type | outro | - |
dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
dc.description.affiliation | Dept. of Physics-FC São Paulo State University - UNESP, C. P. 473, Bauru SP | - |
dc.description.affiliation | Pós-Graduação em Ciência e Tecnologia de Materiais (POSMAT) UNESP | - |
dc.description.affiliation | Dept. of Chemistry and Biochemistry-IB São Paulo State University - UNESP, C.P. 510, Botucatu SP | - |
dc.description.affiliationUnesp | Dept. of Physics-FC São Paulo State University - UNESP, C. P. 473, Bauru SP | - |
dc.description.affiliationUnesp | Pós-Graduação em Ciência e Tecnologia de Materiais (POSMAT) UNESP | - |
dc.description.affiliationUnesp | Dept. of Chemistry and Biochemistry-IB São Paulo State University - UNESP, C.P. 510, Botucatu SP | - |
dc.identifier.doi | 10.1063/1.2926834 | - |
dc.identifier.wos | WOS:000255857900226 | - |
dc.rights.accessRights | Acesso restrito | - |
dc.identifier.file | 2-s2.0-43649091184.pdf | - |
dc.relation.ispartof | AIP Conference Proceedings | - |
dc.identifier.scopus | 2-s2.0-43649091184 | - |
Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp |
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.