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dc.contributor.authorSilva, Vitor D. L.-
dc.contributor.authorPineiz, Tatiane F.-
dc.contributor.authorMorais, Evandro A.-
dc.contributor.authorPinheiro, Marco A. L.-
dc.contributor.authorScalvi, Luis Vicente de Andrade-
dc.contributor.authorSaeki, Margarida Juri-
dc.contributor.authorRubo, Elisabete Aparecida Andrello-
dc.identifier.citationAIP Conference Proceedings, v. 992, p. 1283-1288.-
dc.description.abstractOptical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level. © 2008 American Institute of Physics.en
dc.subjectElectroluminescent devices-
dc.subjectThin films-
dc.subjectTin dioxide-
dc.titleOptical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin filmsen
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationDept. of Physics-FC São Paulo State University - UNESP, C. P. 473, Bauru SP-
dc.description.affiliationPós-Graduação em Ciência e Tecnologia de Materiais (POSMAT) UNESP-
dc.description.affiliationDept. of Chemistry and Biochemistry-IB São Paulo State University - UNESP, C.P. 510, Botucatu SP-
dc.description.affiliationUnespDept. of Physics-FC São Paulo State University - UNESP, C. P. 473, Bauru SP-
dc.description.affiliationUnespPós-Graduação em Ciência e Tecnologia de Materiais (POSMAT) UNESP-
dc.description.affiliationUnespDept. of Chemistry and Biochemistry-IB São Paulo State University - UNESP, C.P. 510, Botucatu SP-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofAIP Conference Proceedings-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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