You are in the accessibility menu

Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/72069
Full metadata record
DC FieldValueLanguage
dc.contributor.authorMoura, Francisco-
dc.contributor.authorSimões, Alexandre Zirpoli-
dc.contributor.authorZaghete, Maria Aparecida-
dc.contributor.authorVarela, José Arana-
dc.contributor.authorLongo, Elson-
dc.date.accessioned2014-05-27T11:25:21Z-
dc.date.accessioned2016-10-25T18:33:00Z-
dc.date.available2014-05-27T11:25:21Z-
dc.date.available2016-10-25T18:33:00Z-
dc.date.issued2010-12-01-
dc.identifierhttp://dx.doi.org/10.1166/jamr.2010.1046-
dc.identifier.citationJournal of Advanced Microscopy Research, v. 5, n. 3, p. 223-231, 2010.-
dc.identifier.issn2156-7573-
dc.identifier.issn2156-7581-
dc.identifier.urihttp://hdl.handle.net/11449/72069-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/72069-
dc.description.abstractDielectric spectroscopy was used in this study to examine polycrystalline vanadium and tungstendoped BaZr 0.1Ti 0.90O 3 (BZT10:2V and BZT10:2W) ceramics obtained by the mixed oxide method. According to X-ray diffraction analyses, addition of vanadium and tungsten lead to ceramics free of secondary phases. SEM analyses reveal that both dopants result in slower oxygen ion motion and consequently lower grain growth rate. Temperature dependence dielectric study showed normal ferroelectric to paraelectric transition well above the room temperature for the BZT10 and BZT10:2V ceramics. However, BZT10:2W ceramic showed a relaxor-like behavior near phase transition characterized by the empirical parameter γ. Piezoelectric force microscopy images reveals that the piezoelectric coefficient is strongly influenced by type of donor dopant suggesting promising applications for dynamic random access memories and data-storage media. Copyright © 2010 American Scientific Publishers All rights reserved.en
dc.format.extent223-231-
dc.language.isoeng-
dc.sourceScopus-
dc.subjectCeramics-
dc.subjectDieletric response-
dc.subjectDopants-
dc.subjectMixed oxide-
dc.subjectPiezoelectricity-
dc.subjectDielectric analysis-
dc.subjectDielectric studies-
dc.subjectDonor dopants-
dc.subjectDynamic random access memory-
dc.subjectEmpirical parameters-
dc.subjectIon motions-
dc.subjectMixed oxide method-
dc.subjectParaelectric transitions-
dc.subjectPiezoelectric coefficient-
dc.subjectPiezoelectric force microscopy-
dc.subjectPolycrystalline-
dc.subjectRoom temperature-
dc.subjectSecondary phasis-
dc.subjectSEM analysis-
dc.subjectTemperature dependence-
dc.subjectZirconium titanate-
dc.subjectBarium-
dc.subjectCrystallography-
dc.subjectDigital storage-
dc.subjectDoping (additives)-
dc.subjectFerroelectric ceramics-
dc.subjectGrain growth-
dc.subjectTungsten-
dc.subjectVanadium-
dc.subjectX ray diffraction-
dc.subjectX ray diffraction analysis-
dc.subjectZirconium-
dc.subjectCeramic materials-
dc.titleMicroscopic and dielectric analyses of vanadium and tungsten modified barium zirconium titanate ceramicsen
dc.typeoutro-
dc.contributor.institutionSCampus Itabira-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationUniversidade Federal de Itajubá-Unifei SCampus Itabira, Rua São Paulo 377, 35900-37, Itabira, Minas Gerais-
dc.description.affiliationLaboratório Interdisciplinar em Cerâmica Instituto de Química Universidade Estadual Paulista, P.O. Box 355, 14801-907, Araraquara, São Paulo-
dc.description.affiliationUnespLaboratório Interdisciplinar em Cerâmica Instituto de Química Universidade Estadual Paulista, P.O. Box 355, 14801-907, Araraquara, São Paulo-
dc.identifier.doi10.1166/jamr.2010.1046-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofJournal of Advanced Microscopy Research-
dc.identifier.scopus2-s2.0-84867518058-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

There are no files associated with this item.
 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.