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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/74430
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dc.contributor.authorLeite, D. M G-
dc.contributor.authorPereira, A. L J-
dc.contributor.authorIwamoto, W. A.-
dc.contributor.authorPagliuso, P. G.-
dc.contributor.authorLisboa Filho, Paulo Noronha-
dc.contributor.authorSilva, José Humberto Dias da-
dc.date.accessioned2014-05-27T11:28:16Z-
dc.date.accessioned2016-10-25T18:43:05Z-
dc.date.available2014-05-27T11:28:16Z-
dc.date.available2016-10-25T18:43:05Z-
dc.date.issued2013-01-29-
dc.identifierhttp://dx.doi.org/10.1016/j.solidstatesciences.2012.11.020-
dc.identifier.citationSolid State Sciences, v. 17, p. 97-101.-
dc.identifier.issn1293-2558-
dc.identifier.urihttp://hdl.handle.net/11449/74430-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/74430-
dc.description.abstractThe magnetic characteristics of Ga1-xMnxN nanocrystalline films (x = 0.08 and x = 0.18), grown by reactive sputtering onto amorphous silica substrates (a-SiO2), are shown. Further than the dominant paramagnetic-like behaviour, both field- and temperature-dependent magnetization curves presented some particular features indicating the presence of secondary magnetic phases. A simple and qualitative analysis based on the Brillouin function assisted the interpretation of these secondary magnetic contributions, which were tentatively attributed to antiferromagnetic and ferromagnetic phases. © 2012 Elsevier Masson SAS. All rights reserved.en
dc.format.extent97-101-
dc.language.isoeng-
dc.sourceScopus-
dc.subjectDiluted magnetic semiconductor-
dc.subjectGaMnN-
dc.subjectMagnetic properties-
dc.subjectNanocrystalline material-
dc.subjectSputtering-
dc.subjectAmorphous silica-
dc.subjectAntiferromagnetics-
dc.subjectBrillouin functions-
dc.subjectDiluted magnetic semiconductors-
dc.subjectFerromagnetic phasis-
dc.subjectMagnetic characteristic-
dc.subjectMagnetic contribution-
dc.subjectMagnetization curves-
dc.subjectNanocrystalline films-
dc.subjectNanocrystallines-
dc.subjectQualitative analysis-
dc.subjectSecondary magnetic phasis-
dc.subjectTemperature dependent-
dc.subjectAntiferromagnetism-
dc.subjectGallium alloys-
dc.subjectMagnetic semiconductors-
dc.subjectManganese-
dc.subjectNanocrystalline materials-
dc.subjectParamagnetism-
dc.subjectSemiconducting gallium-
dc.subjectSilica-
dc.subjectAmorphous films-
dc.titleMagnetic characteristics of nanocrystalline GaMnN films deposited by reactive sputteringen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)-
dc.description.affiliationDepartamento de Física Advanced Materials Group Univ. Estadual Paulista-UNESP, Av. Eng. Edmundo C. Coube, 14-01, CEP 17033-360 Bauru, SP-
dc.description.affiliationInstituto de Física Gleb Wataghin Unicamp, Campinas 13083-970, SP-
dc.description.affiliationUnespDepartamento de Física Advanced Materials Group Univ. Estadual Paulista-UNESP, Av. Eng. Edmundo C. Coube, 14-01, CEP 17033-360 Bauru, SP-
dc.identifier.doi10.1016/j.solidstatesciences.2012.11.020-
dc.identifier.wosWOS:000316437100016-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofSolid State Sciences-
dc.identifier.scopus2-s2.0-84872765751-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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