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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/74823
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dc.contributor.authorFedorko, P.-
dc.contributor.authorFaure-Vincent, J.-
dc.contributor.authorFier, I.-
dc.contributor.authorWalmsley, L.-
dc.contributor.authorSniechowski, M.-
dc.contributor.authorJacquot, J. F.-
dc.contributor.authorPron, A.-
dc.contributor.authorTravers, J. P.-
dc.contributor.authorDjurado, D.-
dc.date.accessioned2014-05-27T11:28:40Z-
dc.date.accessioned2016-10-25T18:45:34Z-
dc.date.available2014-05-27T11:28:40Z-
dc.date.available2016-10-25T18:45:34Z-
dc.date.issued2013-03-12-
dc.identifierhttp://dx.doi.org/10.1016/j.synthmet.2013.01.017-
dc.identifier.citationSynthetic Metals, v. 166, n. 1, p. 63-69, 2013.-
dc.identifier.issn0379-6779-
dc.identifier.urihttp://hdl.handle.net/11449/74823-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/74823-
dc.description.abstractIt is shown that highly conducting films of polyaniline protonated with di-esters of sulfosuccinic and sulfophthalic acids which contain alkyl- or alkoxy-type substituents exhibit highly anisotropic structural, electrical and magnetic properties. The layered-like structure of these films can be described as consisting of polyaniline chains which are mainly oriented parallel to the plane of the film and form regular out-of-plane stacks. These stacks are separated by bilayers of the dopant anions. Accordingly, the main anisotropy observed for solution cast films implies in-plane and out-of-plane measurements. An electrical anisotropy of about 80 is found for the in-plane and out-of-plane electronic conductivities at 5 K. The temperature dependences of the in-plane and out-of-plane conductivities are qualitatively similar and have been fitted as a series combination of variable-range-hopping-type and power law contributions. A maximum is observed in the temperature dependence of the electrical anisotropy at low temperature. The films also show a clear anisotropy of magnetization whose temperature and field characteristics depend on the chemical structure of the dopant anion. © 2013 Elsevier B.V.en
dc.format.extent63-69-
dc.language.isoeng-
dc.sourceScopus-
dc.subjectAnisotropy-
dc.subjectConductivity-
dc.subjectMagnetic properties-
dc.subjectPolyaniline-
dc.subjectStructure-
dc.subjectBi-layer-
dc.subjectElectrical and magnetic property-
dc.subjectElectrical anisotropy-
dc.subjectElectronic conductivity-
dc.subjectLow temperatures-
dc.subjectOut-of-plane-
dc.subjectPolyaniline chains-
dc.subjectPower-law contribution-
dc.subjectProtonated-
dc.subjectSolution-cast films-
dc.subjectStructural anisotropy-
dc.subjectTemperature dependence-
dc.subjectElectric conductivity-
dc.subjectNegative ions-
dc.subjectStructure (composition)-
dc.subjectTemperature distribution-
dc.subjectConductive films-
dc.titleEffect of structural anisotropy on electrical and magnetic properties of polyaniline conducting filmsen
dc.typeoutro-
dc.contributor.institutionSlovak University of Technology-
dc.contributor.institutionCEA Grenoble-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionAGH University of Science and Technology-
dc.contributor.institutionWarsaw University of Technology-
dc.description.affiliationDepartment of Chemical Physics Faculty of Chemical and Food Technology Slovak University of Technology, SK-81237 Bratislava-
dc.description.affiliationInstitut Nanosciences et Cryogénie SPrAM (UMR5819, CEA-CNRS-UJF) CEA Grenoble, 17 rue des Martyrs, 38054, Grenoble cedex 9-
dc.description.affiliationDepartamento de Física Instituto de Geociências e Ciências Exatas Universidade Estadual Paulista (UNESP), Caixa Postal 178, CEP 13500-970, Rio Claro, São Paulo-
dc.description.affiliationFaculty of Physics AGH University of Science and Technology, Al. Mickiewicza 30, 30-059, Krakow-
dc.description.affiliationFaculty of Chemistry Warsaw University of Technology, Noakowskiego 3, 00664, Warsaw-
dc.description.affiliationUnespDepartamento de Física Instituto de Geociências e Ciências Exatas Universidade Estadual Paulista (UNESP), Caixa Postal 178, CEP 13500-970, Rio Claro, São Paulo-
dc.identifier.doi10.1016/j.synthmet.2013.01.017-
dc.identifier.wosWOS:000317453800010-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofSynthetic Metals-
dc.identifier.scopus2-s2.0-84874671572-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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