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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/75107
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dc.contributor.authorVolanti, Diogo P.-
dc.contributor.authorFelix, Anderson A.-
dc.contributor.authorOrlandi, Marcelo Ornaghi-
dc.contributor.authorWhitfield, George-
dc.contributor.authorYang, Dae-Jin-
dc.contributor.authorLongo, Elson-
dc.contributor.authorTuller, Harry L.-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-27T11:28:55Z-
dc.date.accessioned2016-10-25T18:47:24Z-
dc.date.available2014-05-27T11:28:55Z-
dc.date.available2016-10-25T18:47:24Z-
dc.date.issued2013-04-12-
dc.identifierhttp://dx.doi.org/10.1002/adfm.201202332-
dc.identifier.citationAdvanced Functional Materials, v. 23, n. 14, p. 1759-1766, 2013.-
dc.identifier.issn1616-301X-
dc.identifier.issn1616-3028-
dc.identifier.urihttp://hdl.handle.net/11449/75107-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/75107-
dc.description.abstractThe development of gas sensors with innovative designs and advanced functional materials has attracted considerable scientific interest given their potential for addressing important technological challenges. This work presents new insight towards the development of high-performance p-type semiconductor gas sensors. Gas sensor test devices, based on copper (II) oxide (CuO) with innovative and unique designs (urchin-like, fiber-like, and nanorods), are prepared by a microwave-assisted synthesis method. The crystalline composition, surface area, porosity, and morphological characteristics are studied by X-ray powder diffraction, nitrogen adsorption isotherms, field-emission scanning electron microscopy and high-resolution transmission electron microscopy. Gas sensor measurements, performed simultaneously on multiple samples, show that morphology can have a substantial influence on gas sensor performance. An assembly of urchin-like structures is found to be most effective for hydrogen detection in the range of parts-per-million at 200 °C with 300-fold larger response than the previously best reported values for semiconducting CuO hydrogen gas sensors. These results show that morphology plays an important role in the gas sensing performance of CuO and can be effectively applied in the further development of gas sensors based on p-type semiconductors. High-performance gas sensors based on CuO hierarchical morphologies with in situ gas sensor comparison are reported. Urchin-like morphologies with high hydrogen sensitivity and selectivity that show chemical and thermal stability and low temperature operation are analyzed. The role of morphological influences in p-type gas sensor materials is discussed. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.format.extent1759-1766-
dc.language.isoeng-
dc.sourceScopus-
dc.subjectcopper(II) oxide-
dc.subjectgas sensors-
dc.subjectmorphology-
dc.subjectsemiconductors-
dc.subjecturchin-like structures-
dc.subjectField emission scanning electron microscopy-
dc.subjectHierarchical morphology-
dc.subjectMicrowave assisted synthesis-
dc.subjectMorphological characteristic-
dc.subjectNitrogen adsorption isotherm-
dc.subjectp-Type semiconductor gas sensors-
dc.subjectTechnological challenges-
dc.subjectUrchin-like structures-
dc.subjectChemical detection-
dc.subjectChemical sensors-
dc.subjectCopper-
dc.subjectCopper oxides-
dc.subjectDesign-
dc.subjectFunctional materials-
dc.subjectGas sensing electrodes-
dc.subjectHydrogen-
dc.subjectLow temperature operations-
dc.subjectMorphology-
dc.subjectNanorods-
dc.subjectSemiconductor materials-
dc.subjectTransmission electron microscopy-
dc.subjectX ray powder diffraction-
dc.subjectGas detectors-
dc.titleThe role of hierarchical morphologies in the superior gas sensing performance of CuO-based chemiresistorsen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionMassachusetts Institute of Technology (MIT)-
dc.contributor.institutionSamsung Electronics Corporation-
dc.description.affiliationDepartamento de Físico-Química Instituto de Química Universidade Estadual Paulista (UNESP), Araraquara, SP, 14800-900-
dc.description.affiliationDepartment of Materials Science and Engineering Massachusetts Institute of Technology (MIT), Cambridge, MA 02139-
dc.description.affiliationMaterials Research Laboratory Samsung Advanced Institute of Technology Samsung Electronics Corporation, Yongin-Si, Gyeonggi-Do 446-712-
dc.description.affiliationUnespDepartamento de Físico-Química Instituto de Química Universidade Estadual Paulista (UNESP), Araraquara, SP, 14800-900-
dc.identifier.doi10.1002/adfm.201202332-
dc.identifier.wosWOS:000317293100005-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofAdvanced Functional Materials-
dc.identifier.scopus2-s2.0-84875819149-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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