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http://acervodigital.unesp.br/handle/11449/75405
- Title:
- Strain- and electric field-induced band gap modulation in nitride nanomembranes
- Michigan Technological University
- Universidade Federal do ABC (UFABC)
- Universidade Estadual Paulista (UNESP)
- ATTN: RDL-WM
- 0953-8984
- 1361-648X
- The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band gaps in the framework of density functional theory. For AlN, the field-dependent modulation of the bandgap is found to be significant whereas the strain-induced semiconductor-metal transition is predicted for GaN. A relatively flat conduction band in AlN and GaN nanomembranes leads to an enhancement of their electronic mobility compared to that of their bulk counterparts. © 2013 IOP Publishing Ltd.
- 15-May-2013
- Journal of Physics Condensed Matter, v. 25, n. 19, 2013.
- Bandgap modulation
- Bulk counterpart
- Electronic mobility
- Field-induced
- Field-induced modulation
- Group III nitrides
- Semiconductor-metal transition
- Technological applications
- Aluminum nitride
- Density functional theory
- Electric fields
- Gallium nitride
- Modulation
- Nanostructures
- Energy gap
- http://dx.doi.org/10.1088/0953-8984/25/19/195801
- Acesso restrito
- outro
- http://repositorio.unesp.br/handle/11449/75405
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