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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/75405
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dc.contributor.authorAmorim, Rodrigo G.-
dc.contributor.authorZhong, Xiaoliang-
dc.contributor.authorMukhopadhyay, Saikat-
dc.contributor.authorPandey, Ravindra-
dc.contributor.authorRocha, Alexandre R.-
dc.contributor.authorKarna, Shashi P.-
dc.date.accessioned2014-05-27T11:29:30Z-
dc.date.accessioned2016-10-25T18:48:30Z-
dc.date.available2014-05-27T11:29:30Z-
dc.date.available2016-10-25T18:48:30Z-
dc.date.issued2013-05-15-
dc.identifierhttp://dx.doi.org/10.1088/0953-8984/25/19/195801-
dc.identifier.citationJournal of Physics Condensed Matter, v. 25, n. 19, 2013.-
dc.identifier.issn0953-8984-
dc.identifier.issn1361-648X-
dc.identifier.urihttp://hdl.handle.net/11449/75405-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/75405-
dc.description.abstractThe hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band gaps in the framework of density functional theory. For AlN, the field-dependent modulation of the bandgap is found to be significant whereas the strain-induced semiconductor-metal transition is predicted for GaN. A relatively flat conduction band in AlN and GaN nanomembranes leads to an enhancement of their electronic mobility compared to that of their bulk counterparts. © 2013 IOP Publishing Ltd.en
dc.language.isoeng-
dc.sourceScopus-
dc.subjectBandgap modulation-
dc.subjectBulk counterpart-
dc.subjectElectronic mobility-
dc.subjectField-induced-
dc.subjectField-induced modulation-
dc.subjectGroup III nitrides-
dc.subjectSemiconductor-metal transition-
dc.subjectTechnological applications-
dc.subjectAluminum nitride-
dc.subjectDensity functional theory-
dc.subjectElectric fields-
dc.subjectGallium nitride-
dc.subjectModulation-
dc.subjectNanostructures-
dc.subjectEnergy gap-
dc.titleStrain- and electric field-induced band gap modulation in nitride nanomembranesen
dc.typeoutro-
dc.contributor.institutionMichigan Technological University-
dc.contributor.institutionUniversidade Federal do ABC (UFABC)-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionATTN: RDL-WM-
dc.description.affiliationDepartment of Physics Michigan Technological University, Houghton, MI 49931-
dc.description.affiliationCentro de Ciências Naturais e Humanas Universidade Federal Do ABC, Santo André, SP-
dc.description.affiliationInstituto de Física Teórica Universidade Estadual Paulista (UNESP), São Paulo, SP-
dc.description.affiliationUS Army Research Laboratory Weapons and Materials Research Directorate ATTN: RDL-WM, Aberdeen Proving Ground, MD 21005-5069-
dc.description.affiliationUnespInstituto de Física Teórica Universidade Estadual Paulista (UNESP), São Paulo, SP-
dc.identifier.doi10.1088/0953-8984/25/19/195801-
dc.identifier.wosWOS:000318070100022-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofJournal of Physics: Condensed Matter-
dc.identifier.scopus2-s2.0-84876905182-
dc.identifier.orcid0000-0001-8874-6947pt
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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