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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/75523
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dc.contributor.authorCavalcante, L. S.-
dc.contributor.authorBatista, N. C.-
dc.contributor.authorBadapanda, T.-
dc.contributor.authorCosta, M. G S-
dc.contributor.authorLi, M. S.-
dc.contributor.authorAvansi, W.-
dc.contributor.authorMastelaro, V. R.-
dc.contributor.authorLongo, Elson-
dc.contributor.authorEspinosa, J. W M-
dc.contributor.authorGurgel, M. F C-
dc.date.accessioned2014-05-27T11:29:35Z-
dc.date.accessioned2016-10-25T18:48:57Z-
dc.date.available2014-05-27T11:29:35Z-
dc.date.available2016-10-25T18:48:57Z-
dc.date.issued2013-06-01-
dc.identifierhttp://dx.doi.org/10.1016/j.mssp.2012.12.010-
dc.identifier.citationMaterials Science in Semiconductor Processing, v. 16, n. 3, p. 1035-1045, 2013.-
dc.identifier.issn1369-8001-
dc.identifier.urihttp://hdl.handle.net/11449/75523-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/75523-
dc.description.abstractBa(Zr0.75Ti0.25)O3 (BZT-75/25) powders were synthesized by the polymeric precursor method. Samples were structurally characterized by X-ray diffraction (XRD), Rietveld refinement, X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) techniques. Their electronic structures were evaluated by first-principle quantum mechanical calculations based on density functional theory at the B3LYP level. Their optical properties were investigated by ultraviolet-visible (UV-Vis) spectroscopy and photoluminescence (PL) measurements at room temperature. XRD patterns and Rietveld refinement data indicate that the samples have a cubic structure. XANES spectra confirm the presence of pyramidal [TiO5] clusters and octahedral [TiO6] clusters in the disordered BZT-75/25 powders. EXAFS spectra indicate distortion of Ti-O and Ti-O-Ti bonds the first and second coordination shells, respectively. UV-Vis absorption spectra confirm the presence of different optical bandgap values and the band structure indicates an indirect bandgap for this material. The density of states demonstrates that intermediate energy levels occur between the valence band (VB) and the conduction band (CB). These electronic levels are due to the predominance of 4d orbitals of Zr atoms in relation to 3d orbitals of Ti atoms in the CB, while the VB is dominated by 2p orbitals related to O atoms. There was good correlation between the experimental and theoretical optical bandgap values. When excited at 482 nm at room temperature, BZT-75/25 powder treated at 500 C for 2 h exhibited broad and intense PL emission with a maximum at 578 nm in the yellow region. © 2013 Elsevier Ltd. All rights reserved.en
dc.format.extent1035-1045-
dc.language.isoeng-
dc.sourceScopus-
dc.subjectCrystal structure-
dc.subjectDefects-
dc.subjectDensity functional theory calculations-
dc.subjectOptical properties-
dc.subjectX-ray absorption near-edge structure-
dc.subjectExtended X-ray absorption fine structures-
dc.subjectLocal electronic structures-
dc.subjectPhotoluminescence measurements-
dc.subjectPhotoluminescence properties-
dc.subjectPolymeric precursor methods-
dc.subjectQuantum-mechanical calculation-
dc.subjectAtoms-
dc.subjectDensity functional theory-
dc.subjectElectronic structure-
dc.subjectExtended X ray absorption fine structure spectroscopy-
dc.subjectOptical band gaps-
dc.subjectPhotoluminescence-
dc.subjectRietveld refinement-
dc.subjectUltraviolet spectroscopy-
dc.subjectX ray absorption-
dc.subjectX ray diffraction-
dc.subjectZirconium-
dc.subjectPowders-
dc.titleLocal electronic structure, optical bandgap and photoluminescence (PL) properties of Ba(Zr0.75Ti0.25)O3 powdersen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual do Piauí (UESPI)-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionNational Institute of Technology-
dc.contributor.institutionQuímica-
dc.contributor.institutionUniversidade de São Paulo (USP)-
dc.contributor.institutionUniversidade Federal de Goiás (UFG)-
dc.description.affiliationDepartamento de Química UESPI-CCN, Rua João Cabral, P.O. Box 2231, 64002-150 Teresina-PI-
dc.description.affiliationUniversidade Estadual Paulista, P.O. Box 355, CEP, 14801-907 Araraquara, São Paulo-
dc.description.affiliationDepartment of Physics National Institute of Technology, Rourkela 769008-
dc.description.affiliationInstituto Federal Do Maranhão Química, CEP 65025-001, Sao Luís, MA-
dc.description.affiliationIFSC-Universidade de São Paulo, P.O. Box 369, 13560-970 São Carlos, São Paulo-
dc.description.affiliationUniversidade Federal de Goiás Câmpus de Catalão, Engenharia de Produção, Avenida Dr. Lamartine Pinto de Avelar, 1120 CEP 75700-000-
dc.description.affiliationUnespUniversidade Estadual Paulista, P.O. Box 355, CEP, 14801-907 Araraquara, São Paulo-
dc.identifier.doi10.1016/j.mssp.2012.12.010-
dc.identifier.wosWOS:000319641500069-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofMaterials Science in Semiconductor Processing-
dc.identifier.scopus2-s2.0-84877575589-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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