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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/75908
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dc.contributor.authorSuman, P. H.-
dc.contributor.authorFelix, A. A.-
dc.contributor.authorTuller, H. L.-
dc.contributor.authorVarela, José Arana-
dc.contributor.authorOrlandi, Marcelo Ornaghi-
dc.date.accessioned2014-05-27T11:29:55Z-
dc.date.accessioned2016-10-25T18:51:01Z-
dc.date.available2014-05-27T11:29:55Z-
dc.date.available2016-10-25T18:51:01Z-
dc.date.issued2013-07-03-
dc.identifierhttp://dx.doi.org/10.1016/j.snb.2013.05.087-
dc.identifier.citationSensors and Actuators, B: Chemical, v. 186, p. 103-108.-
dc.identifier.issn0925-4005-
dc.identifier.urihttp://hdl.handle.net/11449/75908-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/75908-
dc.description.abstractSingle crystalline SnO micro-disks, synthesized by a carbothermal reduction process, exhibited a nearly 1000-fold increase in resistance upon exposure to 100 ppm of NO2 without addition of catalysts or dopants nor the existence of nano-sized dimensions. Moreover, the SnO displayed a greater than 100-fold selectivity to NO2 over potential interferents including CO, H2 and CH4. The high sensor signal and exceptional selectivity for this novel sensor material are attributed to the existence of a high density of active lone pair electrons on the exposed (0 0 1) planes of the single crystalline SnO disks. This, thereby, identifies new means, not utilizing nano-dimensions, to achieve high gas sensitivity. © 2013 Elsevier B.V. All rights reserved.en
dc.format.extent103-108-
dc.language.isoeng-
dc.sourceScopus-
dc.subjectGas sensor-
dc.subjectGiant chemo-resistance-
dc.subjectSnO-
dc.subjectChemoresistance-
dc.subjectGas sensitivity-
dc.subjectLone pair electrons-
dc.subjectNano-dimensions-
dc.subjectNano-sized dimensions-
dc.subjectSensor materials-
dc.subjectSingle-crystalline-
dc.subjectChemical sensors-
dc.subjectCrystalline materials-
dc.subjectNitrogen oxides-
dc.subjectNanosensors-
dc.titleGiant Chemo-Resistance of SnO disk-like structuresen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionMassachusetts Institute of Technology (MIT)-
dc.description.affiliationDepartament of Physical-Chemistry São Paulo State University, Araraquara, SP 14800-900-
dc.description.affiliationDepartment of Materials Science and Engineering Massachusetts Institute of Technology, Cambridge, MA 02139-
dc.description.affiliationUnespDepartament of Physical-Chemistry São Paulo State University, Araraquara, SP 14800-900-
dc.identifier.doi10.1016/j.snb.2013.05.087-
dc.identifier.wosWOS:000324223600015-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofSensors and Actuators B: Chemical-
dc.identifier.scopus2-s2.0-84879488630-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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