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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/75949
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dc.contributor.authorFoschini, C. R.-
dc.contributor.authorTararam, R.-
dc.contributor.authorSimões, A. Z.-
dc.contributor.authorCilense, M.-
dc.contributor.authorLongo, Elson-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-27T11:29:57Z-
dc.date.accessioned2016-10-25T18:51:09Z-
dc.date.available2014-05-27T11:29:57Z-
dc.date.available2016-10-25T18:51:09Z-
dc.date.issued2013-07-11-
dc.identifierhttp://dx.doi.org/10.1016/j.jallcom.2013.05.216-
dc.identifier.citationJournal of Alloys and Compounds, v. 574, p. 604-608.-
dc.identifier.issn0925-8388-
dc.identifier.urihttp://hdl.handle.net/11449/75949-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/75949-
dc.description.abstractCalcium copper titanate, CaCu3Ti4O12, CCTO, thin films with polycrystalline nature have been deposited by RF sputtering on Pt/Ti/SiO2/Si (100) substrates at a room temperature followed by annealing at 600 °C for 2 h in a conventional furnace. The CCTO thin film present a cubic structure with lattice parameter a = 7.379 ±0.001 Å free of secondary phases. The observed electrical features of CCTO thin films are highly dependent on the [CaO12], [CaO 4], [CuO11], [CuO11Vx 0] and [TiO5.VO] clusters. The CCTO film capacitor showed a dielectric loss of 0.40 and a dielectric permittivity of 70 at 1 kHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. © 2013 Elsevier B.V. All rights reserved.en
dc.format.extent604-608-
dc.language.isoeng-
dc.sourceScopus-
dc.subjectChemical synthesis-
dc.subjectElectron microscopy-
dc.subjectThin films-
dc.subjectX-ray diffraction-
dc.subjectCalcium copper titanates-
dc.subjectConventional furnace-
dc.subjectCubic structure-
dc.subjectDielectric permittivities-
dc.subjectInterfacial barriers-
dc.subjectPolycrystalline-
dc.subjectRoom temperature-
dc.subjectSecondary phasis-
dc.subjectDielectric losses-
dc.subjectPermittivity-
dc.subjectSynthesis (chemical)-
dc.subjectX ray diffraction-
dc.titleCaCu3Ti4O12 thin films with non-linear resistivity deposited by RF-sputteringen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationUniversidade Estadual Paulista - UNESP Faculdade de Engenharia de Bauru Dept. de Eng. Mecânica, Av. Eng. Luiz Edmundo C. Coube 14-01, CEP 17033-360 Bauru, SP-
dc.description.affiliationUniversidade Estadual Paulista - UNESP Instituto de Química, Rua Prof. Francisco Degni no. 55, CEP 14800-900 Araraquara, SP-
dc.description.affiliationUniversidade Estadual Paulista - UNESP Faculdade de Engenharia de Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha, no. 333, CEP 12516-410 Guaratinguetá, SP-
dc.description.affiliationUnespUniversidade Estadual Paulista - UNESP Faculdade de Engenharia de Bauru Dept. de Eng. Mecânica, Av. Eng. Luiz Edmundo C. Coube 14-01, CEP 17033-360 Bauru, SP-
dc.description.affiliationUnespUniversidade Estadual Paulista - UNESP Instituto de Química, Rua Prof. Francisco Degni no. 55, CEP 14800-900 Araraquara, SP-
dc.description.affiliationUnespUniversidade Estadual Paulista - UNESP Faculdade de Engenharia de Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha, no. 333, CEP 12516-410 Guaratinguetá, SP-
dc.identifier.doi10.1016/j.jallcom.2013.05.216-
dc.identifier.wosWOS:000321749600097-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofJournal of Alloys and Compounds-
dc.identifier.scopus2-s2.0-84879825033-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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