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dc.contributor.authorOliveira, Tâmara R.-
dc.contributor.authorFalcão-Filho, Edilson L.-
dc.contributor.authorDe Araújo, Cid B.-
dc.contributor.authorDa Silva, Diego S.-
dc.contributor.authorKassab, Luciana R. P.-
dc.contributor.authorDa Silva, Davinson M.-
dc.date.accessioned2014-05-27T11:30:11Z-
dc.date.accessioned2016-10-25T18:52:45Z-
dc.date.available2014-05-27T11:30:11Z-
dc.date.available2016-10-25T18:52:45Z-
dc.date.issued2013-08-21-
dc.identifierhttp://dx.doi.org/10.1063/1.4818502-
dc.identifier.citationJournal of Applied Physics, v. 114, n. 7, 2013.-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/11449/76307-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/76307-
dc.description.abstractThe nonlinear (NL) optical properties of glassy xBi2O 3-(1-x) GeO2 with x = 0.72 and 0.82 were investigated. The experiments were performed with lasers at 800 nm (pulses of 150 fs) and 532 nm (pulses of 80 ps and 250 ns). Using the Kerr gate technique, we observed that the NL response of the samples at 800 nm is faster than 150 fs. NL refraction indices, | n 2 | ≈ 5 × 10-16 cm2/W, and two-photon absorption coefficients, α 2, smaller than 0.03 cm/GW, were measured at 800 nm. At 532 nm, we measured the NL transmittance of the samples. From the results obtained, we determined α 2 ≈1 cm/GW and excited-state absorption cross-sections of ≈10-22 cm2 due to free-carriers. © 2013 AIP Publishing LLC.en
dc.language.isoeng-
dc.sourceScopus-
dc.subjectExcited state absorption-
dc.subjectFree carriers-
dc.subjectKerr gates-
dc.subjectNon-linear optical properties-
dc.subjectRefraction index-
dc.subjectTwo-photon absorptions-
dc.subjectTwo photon processes-
dc.subjectGlass-
dc.titleNonlinear optical properties of Bi2O3-GeO2 glass at 800 and 532 nmen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual da Paraíba-
dc.contributor.institutionUniversidade Federal de Pernambuco (UFPE)-
dc.contributor.institutionUniversidade de São Paulo (USP)-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationDepartamento de Física Universidade Estadual da Paraíba, 58429-500 Campina Grande, PB-
dc.description.affiliationDepartamento de Física Universidade Federal de Pernambuco, 50670-901 Recife, PE-
dc.description.affiliationDepartamento de Engenharia de Sistemas Eletrônicos Escola Politécnica Universidade de São Paulo, 05508-970 São Paulo, SP-
dc.description.affiliationLaboratório de Tecnologia em Materiais Fotônicos e Optoeletrônicos Faculdade de Tecnologia de São Paulo CEETEPS/UNESP, 01124-060 São Paulo, SP-
dc.description.affiliationUnespLaboratório de Tecnologia em Materiais Fotônicos e Optoeletrônicos Faculdade de Tecnologia de São Paulo CEETEPS/UNESP, 01124-060 São Paulo, SP-
dc.identifier.doi10.1063/1.4818502-
dc.identifier.wosWOS:000323510900012-
dc.rights.accessRightsAcesso restrito-
dc.identifier.file2-s2.0-84883309617.pdf-
dc.relation.ispartofJournal of Applied Physics-
dc.identifier.scopus2-s2.0-84883309617-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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