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DC Field | Value | Language |
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dc.contributor.author | Boratto, Miguel Henrique | - |
dc.contributor.author | Scalvi, Luis Vicente de Andrade | - |
dc.date.accessioned | 2014-05-27T11:30:46Z | - |
dc.date.accessioned | 2016-10-25T18:54:35Z | - |
dc.date.available | 2014-05-27T11:30:46Z | - |
dc.date.available | 2016-10-25T18:54:35Z | - |
dc.date.issued | 2013-10-01 | - |
dc.identifier | http://dx.doi.org/10.1016/j.ceramint.2013.09.041 | - |
dc.identifier.citation | Ceramics International. | - |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.uri | http://hdl.handle.net/11449/76700 | - |
dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/76700 | - |
dc.description.abstract | Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation by means of annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 °C is responsible for reasonable oxidation, which is accelerated up to 8 times for O2-rich atmosphere. Results of surface electrical resistivity and Raman spectroscopy are in good agreement with these findings. Surprisingly, X-ray and Raman data suggest also the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. © 2013 Elsevier Ltd and Techna Group S.r.l. | en |
dc.language.iso | eng | - |
dc.source | Scopus | - |
dc.subject | Alumina | - |
dc.subject | Oxidation | - |
dc.subject | Resistive evaporation | - |
dc.subject | Thermal annealing | - |
dc.title | Deposition of Al2O3 by resistive evaporation and thermal oxidation of Al to be applied as a transparent FET insulating layer | en |
dc.type | outro | - |
dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
dc.identifier.doi | 10.1016/j.ceramint.2013.09.041 | - |
dc.identifier.wos | WOS:000329882100155 | - |
dc.rights.accessRights | Acesso restrito | - |
dc.relation.ispartof | Ceramics International | - |
dc.identifier.scopus | 2-s2.0-84884618771 | - |
Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp |
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