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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/9414
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dc.contributor.authorSimões, Alexandre Zirpoli-
dc.contributor.authorRamirez, M. A.-
dc.contributor.authorRiccardi, C. S.-
dc.contributor.authorLongo, Elson-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-20T13:28:18Z-
dc.date.accessioned2016-10-25T16:48:03Z-
dc.date.available2014-05-20T13:28:18Z-
dc.date.available2016-10-25T16:48:03Z-
dc.date.issued2008-12-01-
dc.identifierhttp://dx.doi.org/10.1016/j.solidstatesciences.2008.03.027-
dc.identifier.citationSolid State Sciences. Amsterdam: Elsevier B.V., v. 10, n. 12, p. 1951-1957, 2008.-
dc.identifier.issn1293-2558-
dc.identifier.urihttp://hdl.handle.net/11449/9414-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/9414-
dc.description.abstractStrontium bismuth titanate (SrBi4Ti4O15) thin films were deposited on (111) Pt/Ti/SiO2/Si Substrates by spin coating from the polymeric precursor method. Annealing in static air and dynamic oxygen atmosphere was performed at 700 degrees C for 2 h. The films were characterized by X-ray diffraction, atomic force microscopy and electric properties. The dielectric properties of SrBi4Ti4O15 films were found to be remarkably sensitive to the annealing atmosphere. The C-V characteristics of the metal-ferroelectric metal structure showed a typical butterfly loop that confirms the ferroelectric properties of the film related to the domains switching. SrBi4Ti4O15 thin films annealed in oxygen atmosphere showed lower ferroelectric behavior indicating a weak ferroelectricity along c-axis direction. Published by Elsevier Masson SAS.en
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
dc.format.extent1951-1957-
dc.language.isoeng-
dc.publisherElsevier B.V.-
dc.sourceWeb of Science-
dc.subjectThin filmsen
dc.subjectAtomic force microscopyen
dc.subjectDielectric propertiesen
dc.titleEffect of oxidizing atmosphere on the electrical properties of SrBi4Ti4O15 thin films obtained by the polymeric precursor methoden
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationSão Paulo State Univ UNESP, Inst Chem, BR-14801970 Araraguara, SP, Brazil-
dc.description.affiliationSão Paulo State Univ UNESP, BR-17033360 Bauru, SP, Brazil-
dc.description.affiliationUnespSão Paulo State Univ UNESP, Inst Chem, BR-14801970 Araraguara, SP, Brazil-
dc.description.affiliationUnespSão Paulo State Univ UNESP, BR-17033360 Bauru, SP, Brazil-
dc.identifier.doi10.1016/j.solidstatesciences.2008.03.027-
dc.identifier.wosWOS:000262236800044-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofSolid State Sciences-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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