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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/117065
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dc.contributor.authorFagotto, EAM-
dc.contributor.authorRossi, S. M.-
dc.contributor.authorMoschim, E.-
dc.date.accessioned2015-03-18T15:55:03Z-
dc.date.accessioned2016-10-25T20:32:43Z-
dc.date.available2015-03-18T15:55:03Z-
dc.date.available2016-10-25T20:32:43Z-
dc.date.issued1998-11-01-
dc.identifierhttp://dx.doi.org/10.1109/16.726657-
dc.identifier.citationIeee Transactions On Electron Devices. New York: Ieee-inst Electrical Electronics Engineers Inc, v. 45, n. 11, p. 2361-2364, 1998.-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/11449/117065-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/117065-
dc.description.abstractIn this paper we show that the electronic properties of multi-open dots structures are strongly modified by even smalt changes in their geometries. Our discussion of these effects is done in terms of the interaction among localized states (dot-like) and extended states (channel-like), from which a Fano resonance situation arises.en
dc.format.extent2361-2364-
dc.language.isoeng-
dc.publisherIeee-inst Electrical Electronics Engineers Inc-
dc.sourceWeb of Science-
dc.subjectquantum dotsen
dc.subjectquantum effect semiconductor devicesen
dc.subjectquantum wiresen
dc.subjectresonant tunneling devicesen
dc.titleGeometry effects on the electronic properties of multi-open dots structuresen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationState Univ Campinas, Sch Elect & Comp Engn, BR-1308197 Campinas, Brazil-
dc.identifier.doi10.1109/16.726657-
dc.identifier.wosWOS:000076754800015-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofIeee Transactions On Electron Devices-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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